Analog calculation method of ablating silicon nitride by ultrashort pulse laser

Abstract

The invention discloses an analog calculation method of ablating silicon nitride by ultrashort pulse laser, and Matlab is utilized to perform analog calculation and analysis on processing parameters. The analog calculation method mainly comprises the following steps that an ablating model of ablating silicon nitride by ultrashort pulse laser is established, and calculating parameters are initialized; boundary conditions of the plasma density are defined, and an ablating threshold, depth and volume with different analog parameters are calculated through the model; and on the basis of calculation results and a residual height model, the laser ablated residual height is analyzed and evaluated, and guiding parameters are given. By using the analog calculation method, the process of obtaining the processing parameters by repeated experiment can be avoided, analog results can be utilized to optimize the processing parameters, thereby shortening the product cycle, reducing the processing cost and increasing the production efficiency, and therefore, the analog calculation method has an important guiding value for the actual manufacturing process of ablating silicon nitride by ultrashort pulse laser.

Description

technical field [0001] The invention belongs to the technical field of ultrashort pulse laser micromachining, in particular to a simulation calculation method for ultrashort pulse laser ablation of silicon nitride. Background technique [0002] With the rapid development of advanced manufacturing technology and industrial level, research on silicon nitride materials has also attracted much attention. Because silicon nitride materials have the characteristics of high chemical stability, high thermal shock resistance, high hardness, high temperature resistance, radiation resistance, corrosion resistance, good thermohardness, and excellent optical properties. Therefore, it has been widely used in optoelectronics, machinery, atomic energy, aerospace and other industries, and as it is widely used in precision and ultra-precision fields such as microelectronics, it is particularly important to perform microprocessing on it. However, silicon nitride is a high-hard and brittle mate...

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Problems solved by technology

[0010] In order to solve the problems that the removal accuracy is difficult to control and the process parameters are difficult to determine in the process of ultrashort pulse laser ablation of silicon nitride, the present invention overcomes the shortcomings of the existing simulation calculation method, and studies the single effect of a single variable and multiple The law of joint action of two variables, the key lies in:

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