NANDFLASH bad sector dynamic label processing method based on blocks

A technology for marking processing and bad areas, applied in response to error generation, memory address/allocation/relocation, etc., can solve problems such as time-consuming, time-consuming, etc., to improve speed, ensure credibility and real-time performance , The effect of reducing the occupation of hardware resources

Inactive Publication Date: 2013-08-28
BEIJING AEROSPACE AUTOMATIC CONTROL RES INST +1
View PDF6 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method marks the state of each page of information in the flash memory, so that the system needs to spend time reading the mark value before operating each page of the flash memory, and marks the state of the page after the operation is completed, which takes a lot of time

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • NANDFLASH bad sector dynamic label processing method based on blocks
  • NANDFLASH bad sector dynamic label processing method based on blocks

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] Specific embodiments of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0039] In the method for bypassing invalid blocks in the present invention, the effective information of each block is marked with blocks rather than pages, so that the system does not need to read the mark value before each page of the flash memory is operated, but only needs to Read the mark before operating on the new block; there is no need to mark the state of each page after the operation is completed, just mark the valid state of each block before use or when needed. Taking the K9K8G08U0M produced by Samsung as an example, the time of bypassing invalid blocks can be saved by about 98.4% (the efficiency is related to the chip model). The bad block information table is placed in the free byte area of ​​the first few pages of the first block, which can fully save user space. The establishment and updating of the bad area informati...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a NANDFLASH bad sector dynamic label processing method based on blocks. A NANDFLASH chip is detected firstly, and then normal read-write using is carried out. Valid information of each block is labeled with one block as a unit rather than with one page as a unit, so that a system does not need to read labeling value before operation is carried out on each page of flash memory, the system only needs to read labels before a new block is operated, the system does not need to label the state of each page after the operation is finished, and the system only needs to mark the valid state of each block before the block is used or when the block is needed.

Description

technical field [0001] The invention relates to a block-based NANDFLASH bad block dynamic mark processing method. Background technique [0002] Flash memory FLASH (flash memory) is currently the most cost-effective and reliable rewritable, non-volatile memory. Flash memory is low in cost, small in size, strong in shock resistance, and large in storage capacity, and has been widely used as an external storage component in embedded systems. Now mainstream flash memory is divided into NOR type and NAND type. NAND type flash memory has faster writing and erasing speed than NOR type, larger unit storage capacity, and lower cost than NOR type. Therefore, NAND type flash memory is better than NOR type in large-capacity data storage. Flash has more advantages. [0003] NAND FLASH will have bad areas due to technological reasons, also known as invalid blocks. In the process of operating flash memory, invalid blocks have random growth. How to detect and manage invalid blocks of flas...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G06F11/07G06F12/02
Inventor 刘秀娟王健王浩张春侠齐建宇
Owner BEIJING AEROSPACE AUTOMATIC CONTROL RES INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap