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Method for forming polysilicon, method for manufacturing tft array substrate, and display device

An array substrate, polysilicon technology, applied in semiconductor/solid-state device manufacturing, transistors, instruments, etc., can solve the problems of easy early turn-on and hump, and achieve the effect of avoiding hump phenomenon

Active Publication Date: 2015-12-09
SHANGHAI TIANMA MICRO ELECTRONICS CO LTD
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  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a TFT array substrate and its manufacturing method, so as to solve the problem of the existing TFT array substrate, the TFT is easy to be turned on early at the edge of the channel, and the hump phenomenon is formed

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  • Method for forming polysilicon, method for manufacturing tft array substrate, and display device
  • Method for forming polysilicon, method for manufacturing tft array substrate, and display device
  • Method for forming polysilicon, method for manufacturing tft array substrate, and display device

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Embodiment Construction

[0028] The present invention provides a method for forming polysilicon in a TFT array substrate. In the method, a special step structure is formed at the position of the light shielding layer corresponding to the TFT channel region, and the polysilicon layer formed subsequently is crystallized at the corresponding position is not saturated, that is, The crystallization at the edge of the TFT channel fails to avoid humping.

[0029] The first embodiment of the present invention provides a method for forming polysilicon in a TFT array substrate. The schematic diagram of the implementation process of the method is as follows: figure 2 Shown.

[0030] Step S201: deposit an opaque metal layer on the glass substrate 10.

[0031] Specifically, the glass substrate 10 is first cleaned by an initial cleaning process, and a magnetron sputtering film formation (PVD) method is used to deposit a certain thickness of opaque metal on the cleaned glass substrate 10.

[0032] Step S202: the opaque met...

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Abstract

The invention discloses a polycrystalline silicon forming method, a TFT (thin film transistor) array manufacturing method and a display device, which solves the problems in the prior art that the TFT on the edge of a ditch is easy to start in advance and a hump phenomenon is formed. A step-shaped light shielding layer is formed on a position for performing the TFT, the position of the step shape corresponds to the edge of the TFT ditch, the light shielding layer is provided with a buffering layer and a noncrystalline silicon layer, which are respectively in a consistent step shape, the noncrystalline silicon layer is crystallized at a low temperature to form polycrystalline silicon containing unstaturated crystal, so that the crystallization of the polycrystalline silicon on the edge of the ditch loses the effectiveness, the current of the TFT device on the edge of the ditch is reduced, the situation that the TFT on the edge of the ditch is early started can be avoided, and the hump phenomenon can be avoided.

Description

Technical field [0001] The present invention relates to the field of liquid crystal display manufacturing, in particular to a method for forming polysilicon, a method for manufacturing a TFT array substrate, and a display device. Background technique [0002] The display panel made of low temperature polysilicon technology (LowTemperaturePoly-silicon, LTPS) can reduce the power consumption of the display. In addition, the LTPSTFT (ThinFilmTransistor) display panel has high resolution, fast response, high brightness, and high aperture ratio. And other advantages, LTPSTFT display panels are more and more widely used. [0003] In the existing manufacturing process of the LTPSTFT array substrate, it is first necessary to deposit an opaque metal layer on the glass substrate 10, and etch the opaque metal layer to form a light shielding layer 11 that shields the backlight from irradiating the TFT channel. A buffer layer 12 is formed thereon, and then amorphous silicon a-Si is deposited o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/20H01L21/77H01L29/786G02F1/1362G02F1/1368
CPCH01L27/1288H01L29/78633H01L29/78696
Inventor 彭涛
Owner SHANGHAI TIANMA MICRO ELECTRONICS CO LTD