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Ultraviolet detector with passivated wide bandgap oxide semiconductor thin film layer and preparation method

A technology of oxide semiconductors and ultraviolet detectors, which is applied in the direction of semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., and can solve the problems of slow development of ultraviolet detectors

Inactive Publication Date: 2015-11-04
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are still defects in material growth, preparation process, device structure, etc., and the development of ultraviolet detectors is relatively slow

Method used

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  • Ultraviolet detector with passivated wide bandgap oxide semiconductor thin film layer and preparation method
  • Ultraviolet detector with passivated wide bandgap oxide semiconductor thin film layer and preparation method
  • Ultraviolet detector with passivated wide bandgap oxide semiconductor thin film layer and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] [1] Using an ultrasonic cleaner, use 100mL of chloroform, 100mL of methanol, and 100mL of deionized water as the cleaning solution, and add 1.5g of emery abrasive to the cleaning solution, and ultrasonicate the quartz substrate for 10 minutes in sequence. The ultrasonic power is 100W. Then blow dry under nitrogen flow.

[0043] [2] At room temperature, drop 9mL of acetic acid, 8mL of acetylacetone, and 8mL of deionized water into the continuously stirring mixture of 7mL of tetrabutyl titanate and 95mL of ethanol in sequence, and continue stirring until a uniform and transparent orange Red sol, aged for 48 hours before use.

[0044] [3] The prepared TiO 2 The sol was spin-coated on the cleaned quartz substrate at a speed of 3000rpm, and the homogenization time was 20s. Each layer of TiO 2 The sol was baked at 120°C for 7 minutes, cooled in the air for 3 minutes, and spin-coated 5 layers in total; the spin-coated TiO 2 The substrate of the sol was placed in a muffle fu...

Embodiment 2

[0048] [1] Using an ultrasonic cleaner, use 100mL of chloroform, 100mL of methanol, and 100mL of deionized water as the cleaning solution, and add 0.5g of emery abrasive to the cleaning solution. Ultrasonic the quartz substrate for 20 minutes in sequence, and the ultrasonic power is 80W. Then blow dry under nitrogen flow.

[0049] [2] At room temperature, drop 9mL of acetic acid, 8mL of acetylacetone, and 8mL of deionized water into the continuously stirring mixture of 7mL of tetrabutyl titanate and 95mL of ethanol in sequence, and continue stirring until a uniform and transparent orange Red sol, aged for 24 hours before use.

[0050] [3] The prepared TiO 2 The sol was spin-coated on the cleaned quartz substrate at a speed of 2500rpm, and the homogenization time was 15s. Each layer of TiO 2 The sol was baked at 150°C for 5 minutes, cooled in the air for 5 minutes, and spin-coated 3 layers in total; the spin-coated TiO 2 The substrate of the sol was placed in a muffle furnac...

Embodiment 3

[0058] [1] Using an ultrasonic cleaner, use 100mL of chloroform, 100mL of methanol, and 100mL of deionized water as the cleaning solution, and add 1.5g of emery abrasive to the cleaning solution, and ultrasonicate the quartz substrate for 10 minutes in sequence. The ultrasonic power is 100W. Then blow dry under nitrogen flow.

[0059] [2] At room temperature, drop 9mL of acetic acid, 8mL of acetylacetone, and 8mL of deionized water into the continuously stirring mixture of 7mL of tetrabutyl titanate and 95mL of ethanol in sequence, and continue stirring until a uniform and transparent orange Red sol, aged for 48 hours before use.

[0060] [3] The prepared TiO 2 The sol was spin-coated on the cleaned quartz substrate at a speed of 3000rpm, and the homogenization time was 20s. Each layer of TiO 2 The sol was baked at 120°C for 7 minutes, cooled in the air for 3 minutes, and spin-coated 5 layers in total; the spin-coated TiO 2 The substrate of the sol was placed in a muffle furn...

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Abstract

The invention discloses an ultraviolet detector of a large-energy-gap oxide semiconductor thin film layer and with a passivation function and a preparation method thereof and belongs to the technical field of semiconductor photoelectric devices. The detector is composed of a substrate, a light-sensitive large-energy-gap oxide semiconductor thin film layer on which passivation is carried out with (NH4)2S solution and a metal interdigital electrode in sequence. The ultraviolet detector of the large-energy-gap oxide semiconductor thin film layer and with the passivation function and the preparation method thereof are characterized in that the thin film layer composed of TiO2 and the like is prepared firstly with the sol gel method, ammonium sulfide solution passivation is carried out on the prepared thin film, and finally the metal interdigital electrode is prepared with the techniques such as photoetching, magnetron sputtering and etching to obtain the ultraviolet detector. The state density of the surface of the thin film composed of the TiO2 and the like on which the ammonium sulfide solution passivation is carried out is decreased, the Schottky barrier of the contact between the TiO2 and the metal is reduced after the metal interdigital electrode is sputtered, and light currents and response time are improved; in addition, surface leakage currents are restrained due to the fact that the surface charge is reduced, dark currents are improved, and the overall performance of the detector is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic devices, and in particular relates to an ultraviolet light detector with a wide bandgap oxide semiconductor film layer passivated by an ammonium sulfide solution and a preparation method thereof. Background technique [0002] Ultraviolet detection is another new detection technology with great practicality and application value besides laser, infrared light and visible light detection. It has shown potential in the fields of astronomy, environmental monitoring, ultraviolet communication, combustion engineering, military defense Prospect and application value. [0003] With the development of ultraviolet detection technology, the base material of ultraviolet detectors has undergone a transition from the first-generation semiconductor Si (silicon), the second-generation semiconductor GaAs (gallium arsenide), InP (indium phosphide), etc. to wide bandgap compound semiconductors. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/101H01L31/0264H01L31/18
CPCY02P70/521Y02P70/50
Inventor 刘彩霞刘国华阮圣平张海峰郭文滨周敬然董玮沈亮张歆东温善鹏
Owner JILIN UNIV
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