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A double-terminal active equivalent circuit of charge-controlled memristor

A technology of equivalent circuits and memristors, applied in the field of effective circuits, can solve the problems that memristors do not have a clear double-terminal definition, cannot be completely equivalent to double-terminal components, and cannot be connected in series with other components, so as to achieve clear double-terminal, The effect of high control precision and clear mathematical concepts

Inactive Publication Date: 2016-04-06
GUANGZHOU UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Judging from the current literature, this active memristor does not have a clear definition of two-terminal, that is, it cannot be completely equivalent to a two-terminal element that can be connected to a circuit, for example, it cannot be connected in series with other elements

Method used

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  • A double-terminal active equivalent circuit of charge-controlled memristor
  • A double-terminal active equivalent circuit of charge-controlled memristor
  • A double-terminal active equivalent circuit of charge-controlled memristor

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Embodiment

[0023] Please refer to figure 1 , a dual-terminal active equivalent circuit of a charge-controlled memristor, the equivalent circuit includes a resistor R1, a resistor R2, a resistor R3, a voltage follower 2, a voltage follower 3, a subtractor 4, an adder 5, a subtractor Device 6, Adder 7, Subtractor 8, Integrator 9 with amplification factor K, Divider 10, Subtractor 11 and voltage source U ref ; The resistance R1, resistance R2, and resistance R3 are connected in series in sequence, and the two ends of the resistance R1 are respectively marked as the A terminal and the B terminal, and the two ends of the resistance R3 are respectively marked as the C terminal and the D terminal, wherein the B terminal is the resistance R1 and the resistance The common terminal of R2, the C terminal is the common terminal of the resistor R3 and the resistor R2, and the D terminal and the A terminal respectively represent the two ports of the equivalent active memristor (respectively, the M ter...

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Abstract

A double-end active equivalent circuit of a charge-control memristor is disclosed by the invention, and comprises a resistor R1, a resistor R2, a resistor R3, a first voltage follower, a second voltage follower, a first subtracter, a first adder, a second subtracter, a second adder, a third subtracter, an integrator, a divider, a fourth subtracter and a voltage source Uref. The current flowing through the active memristor is controlled by a feedback, the resistor R1, R2 and R3 in serial connection are used to divide voltage, and the currents flowing through the resistor R1 and the resistor R3 are controlled by respectively adding the feedback between the resistor R1 and R2, and between the resistor R2 and R3. The feedback is realized by an operational circuit based on the U-I characteristic of the memristor, and the U-I curve is made to accord with electrical characteristics of the memristor. Because the double-end active equivalent circuit is realized without control of a variable resistor, the control precision is high; and because the double ends are definite and mathematic concept is clear, the double-end active equivalent circuit can be used with other elements in serial or parallel connection by being accessed into a circuit, and the memristor with the double-end active equivalent circuit is a practical active memristor.

Description

technical field [0001] The invention relates to a basic electrical component, in particular to a dual-terminal active equivalent circuit of a charge-controlled memristor. Background technique [0002] The concept of memristor (Memristor) was proposed by Cai Shaotang in 1971. It got its name from the dependence of its resistance on the electricity passed. It is considered to be the fourth basic circuit element besides resistance, capacitance and inductance. The time memory characteristic of resistance makes it have broad application prospects in many fields such as model analysis, basic circuit design, circuit device design and simulation of biological memory behavior. [0003] Due to the lack of experimental support, memristors have not attracted enough attention despite the development of related theories in the past two decades after they were proposed. [0004] In 2008, the HP laboratory discovered a nanometer double-terminal resistor with memory function, and its electr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/56H03K19/00
Inventor 杨汝李斌华刘佐濂
Owner GUANGZHOU UNIVERSITY
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