semiconductor memory card

A semiconductor and memory card technology, applied in semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., can solve the problems of reduced wiring density, reduced signal transmission speed, and easy increase of substrate area.

Active Publication Date: 2016-04-06
키오시아가부시키가이샤
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Conventional semiconductor memory devices with a SiP structure have a difficulty in that the wiring length from the external connection terminal for electrical connection with external devices to the controller chip tends to become long.
Therefore, the signal transmission speed is lowered, and the substrate area tends to increase due to the lowered wiring density.

Method used

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Experimental program
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Effect test

no. 1 Embodiment approach ）

[0022] For the SiP-structure semiconductor memory device of the first embodiment, refer to Figure 3 to Figure 6 to illustrate. image 3 is a top perspective view showing the semiconductor memory device according to the first embodiment, Figure 4 is along image 3 A sectional view of the A-A line, Figure 5 yes image 3 It is a perspective view of the terminal formation surface of the wiring substrate in the semiconductor storage device seen from the upper surface (molding surface) of the semiconductor storage device, Figure 6 It is viewed from the perspective of the upper surface (molding surface) of the semiconductor memory device image 3 A perspective view of the chip mounting surface of the wiring substrate in the shown semiconductor memory device. The semiconductor storage device 11 ( 3 ) shown in these figures includes a wiring board 12 serving also as a substrate for forming external connection terminals and a substrate for mounting semiconductor chips. The wir...

no. 2 Embodiment approach ）

[0048] Next, regarding the semiconductor memory device having the SiP structure of the second embodiment, refer to Figure 8 to Figure 11 Be explained. Figure 8 It is a top perspective view showing the semiconductor memory device of the second embodiment, Figure 9 is along Figure 8 A sectional view of the A-A line, Figure 10 It is viewed from the upper surface (molding surface) of the semiconductor memory device Figure 8 A perspective view seen from the terminal forming surface of the wiring substrate of the semiconductor memory device shown, Figure 11 It is viewed from the upper surface (molding surface) of the semiconductor memory device Figure 8 It is a perspective view seen from the chip mounting surface of the wiring board of the semiconductor memory device shown. In addition, the same code|symbol is attached|subjected to the same part as 1st Embodiment, and the description is abbreviate|omitted partly.

[0049] Figure 8 to Figure 11 The shown semiconductor...

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PUM

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Abstract

The present invention provides a semiconductor memory card capable of shortening wiring length from an external connection terminal to a controller chip. In one embodiment, the semiconductor memory card is provided with a semiconductor memory device (11) with an SiP structure. The semiconductor memory device (11) comprises: a memory chip (24) configured on a wiring board (12), a controller chip (29) laminated on the memory chip (24) and a resin sealing layer. An electrode pad (301) of the controller chip (29) is electrically connected with the external connection terminal. The electrode pad (301) in a region X1 corresponding to a terminal on the second surface 12b of a wiring board 12 is arranged parallelly to the arrangement direction of the external connection terminal and located at the edge of the controller chip 29 at the first outline side S1 of the wiring board 12 arranged with the external connection terminal.

Description

[0001] This application enjoys the priority of the earlier application with Japanese Patent Application No. 2012-43680 (filing date: February 29, 2012). This application includes the entire contents of the earlier application by referring to the earlier application. technical field [0002] Embodiments of the present invention relate to semiconductor memory cards. Background technique [0003] In memory cards (semiconductor memory cards) that incorporate nonvolatile semiconductor memory chips such as NAND-type flash memory, in order to achieve higher capacity, higher speed, and lower manufacturing costs, etc., they are used in card housings. The structure of a semiconductor storage device with a SiP (SySteminPacking, system-in-package) structure in which a memory chip and / or a controller chip is sealed in one package. A semiconductor storage device having a SiP structure includes: a wiring substrate provided with, for example, external connection terminals; a memory chip an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/488G06K19/077
CPCH01L2224/48091H01L2224/48227H01L2924/13055H01L2924/00014H01L2924/00
Inventor 稻垣洋川村英树冈田隆西山拓
Owner 키오시아가부시키가이샤
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