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ion implanter

An ion implantation device and ion beam technology, which are applied to discharge tubes, electrical components, circuits, etc., can solve problems such as difficulty in adjusting resolution, difficulty in controlling the magnitude of Lorentz force F2, etc.

Inactive Publication Date: 2015-12-09
NISSIN ION EQUIP CO LTD
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Problems solved by technology

Therefore, even with this method, it is very difficult to control the magnitude of the Lorentz force F2
[0021] For the above reasons, in the case of adjusting the resolution using the mass spectrometer magnet of Patent Document 1, it is necessary to control the magnitude of the Lorentz force F2 indirectly generated by the Lorentz force F1 generated in the first stage, but It is very difficult to control the magnitude of the Lorentz force F2, so it is difficult to adjust the resolution

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Embodiment Construction

[0054] In the present invention, the X direction, Y direction, and Z direction shown in each figure correspond to the long side direction, short side direction, and travel direction of the ion beam generated by the ion source, respectively, and the arrow G indicates the gravity direction. In addition, the X direction, the Y direction, and the Z direction are appropriately changed according to the flight path of the ion beam.

[0055] figure 1 The perspective view which shows the whole ion implantation apparatus IM of this invention. The planes P1 and P2 shown by dotted lines are mutually perpendicular planes arranged along the path of the ion beam 2 and correspond to the XZ plane and the YZ plane, respectively.

[0056] The ion beam 2 generated by the ion source 1 is a ribbon-shaped ion beam whose size in the X direction is larger than that in the Y direction. The ion beam 2 is deflected in the Y direction by passing through the mass spectrometer magnet 3 , and is subjected ...

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Abstract

The invention provides an ion implantation apparatus, which can be used to adjust the resolution ratio easily compared to the prior art. The ion implantation apparatus (IM) comprises an ion source (1), which can be used to generate strip-shaped ion beams (2) having a larger size in an X direction than in a Y direction, when a moving direction is defined as a Z direction, and two directions vertical to the Z direction are defined as the X direction and the Y direction; a mass analysis magnet (3), which is provided with at least one solenoid coil (4); and an analysis slit (5). In the XZ plane, the direction of a magnetic field (B) generated by the solenoid coil (4) is inclinedly intersected with the moving direction of the ion beams (2) irradiated in the mass analysis magnet (3).

Description

technical field [0001] The present invention relates to an ion implanter including a solenoid coil in a mass spectrometer magnet. Background technique [0002] In an ion implantation apparatus, a mass spectrometer magnet is used to implant ions having a desired mass into a semiconductor substrate (silicon wafer or glass substrate). [0003] The mass spectrometer magnet described in Patent Document 1 is an example of such a mass spectrometer magnet. Specifically, the mass spectrometer described in Patent Document 1 includes a pair of solenoid coils in a yoke. The short-side direction of the ribbon ion beam incident on the analyzing magnet intersects obliquely with the direction of the magnetic field generated by the solenoid coil disposed on the entrance side of the mass analyzing magnet. In addition, the ribbon-shaped ion beam referred to here means that when the ion beam is cut by a plane perpendicular to the traveling direction of the ion beam, the cross section of the i...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/317H01J37/05
CPCH01J37/026H01J37/08H01J37/14H01J37/1416H01J37/147H01J37/3171H01J37/3266H01J2237/05
Inventor 井内裕
Owner NISSIN ION EQUIP CO LTD
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