TSV wafer thinning on-line control method and system based on infrared technology

Abstract

The invention discloses a TSV wafer thinning on-line control method and system based on the infrared technology. The method comprises the steps that record calibration is conducted on an infrared sensor, the standard position of the infrared sensor on a grinding device is determined and fixed, and an initial set value of the distance from the reverse side of the TSV wafer to the bottom of a through hole is set; reverse side thinning processing is conduced on the TSV wafer; infrared rays are transmitted by the infrared sensor, and a plurality of reflected waves are obtained and received; a data processor is used for screening out the reflected waves of the bottom of the through hole in the TSV wafer, and the distance from the reverse side of the TSV wafer to the bottom of the through hole in the thinning process is calculated; real-time interaction is conducted on the distance in the thinning process and the initial set value; when the distance in the thinning process is equal to the initial set value, reverse side thinning of the TSV wafer is stopped. According to the TSV wafer thinning on-line control method and system based on the infrared technology, non-contact measurement is effectively achieved, the thickness of the bottom of a metal conductive column in the TSV wafer to the reverse side of the wafer can be accurately controlled, and measurement accuracy is high.

Description

technical field [0001] The invention relates to the field of microelectronic technology, in particular to an infrared technology-based online control method and system for TSV wafer thinning. Background technique [0002] As end customers have higher and higher requirements for electronic products, the thickness of chips is becoming thinner and thinner. In this case, the way to improve performance by further reducing the line width of interconnection lines is limited by the physical characteristics of materials and equipment technology, so the concept of through-silicon vias was proposed in time. [0003] The Through Silicon Via (TSV) process realizes direct three-dimensional interconnection between wafers (chips) or between chips and substrates by forming metal pillars in the wafer, which can greatly reduce the thickness of the overall package. Compared with traditional stacking technologies such as bonding technology, this interconnection method has the advantages of high...

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Problems solved by technology

[0008] Although the above two methods can calculate the distance from the bottom of the conductive metal pillar to the back of the wafer by measuring the thickness, in the specific process, the depth of the hole punched on the wafer and the depth of the conductive metal pillar deposition will have a certain degree of error , so the above method cannot accurately obtain the distance from the bottom of the conductive metal pillar to the back of the wafer, which will have a certain impact on the subsequent process

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