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Electrostatic discharge protection TVS device of high maintenance voltage

A technology for electrostatic discharge protection and high maintenance voltage, which is applied in the field of electrostatic discharge protection unit (TVS) devices and electrostatic discharge protection TVS devices. Effects of the latch-up problem

Active Publication Date: 2013-10-16
HAINING BERNSTEIN BIOTECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If an ESD event occurs when the high-voltage device is working, the ESD protection device will start to work, but its operating voltage is very low, even far lower than the operating voltage of the high-voltage device, and it will not be able to be turned off after the ESD event. Seriously affect the normal operation of high-voltage devices, and even burn the high-voltage devices

Method used

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  • Electrostatic discharge protection TVS device of high maintenance voltage
  • Electrostatic discharge protection TVS device of high maintenance voltage
  • Electrostatic discharge protection TVS device of high maintenance voltage

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Embodiment Construction

[0031] The present invention will be further described below in conjunction with the accompanying drawings.

[0032] Such as figure 2 As shown, a high maintenance voltage electrostatic discharge protection TVS device, including a unit device,

[0033] The unit device includes a P substrate 01; a high-voltage N-well 02 is embedded on the P-substrate 01; a P-well 03 is arranged on the high-voltage N-well 02; a third N+ active implant is arranged on the P-well 03 region 07 and the second P+ active implant region 08; the high-voltage N well 02 is provided with a first N+ active implant region 04 and a first P+ active implant region 05 in the region where the P well 03 is not provided, and the high-voltage N well 02 A second N+ active injection region 06 is embedded at the junction of the well 02 and the P well 03;

[0034] The first N+ active implant region 04, the first P+ active implant region 05, the second N+ active implant region 06, the third N+ active implant region 07 a...

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Abstract

The invention discloses an electrostatic discharge protection TVS device of a high maintenance voltage. The device comprises a single component. The single component comprises a P substrate. A high voltage N trap, a P trap, a first N+ active injection area, a second N+ active injection area, a third N+ active injection area, a first P+ active injection area, a second P+ active injection area, an oxide layer and a polysilicon gate are comprised. The first N+ active injection area is led out through a metal line and is taken as an anode of the single component. The polysilicon gate is connected with the third N+ active injection area and the second P+ active injection area through the metal line, is led out and is taken as a cathode of the single component. The electrostatic discharge protection device of the high maintenance voltage possesses a good electrostatic discharge capacity and possesses the high maintenance voltage. When an integrated circuit works, effective protection can be achieved if an ESD event is generated. A bolt-lock problem is avoided.

Description

technical field [0001] The invention relates to a high sustaining voltage electrostatic discharge protection TVS device, in particular to a high sustaining voltage electrostatic protection unit (TVS) device, which belongs to the technical field of integrated circuit electrostatic protection. Background technique [0002] ESD (Electrostatic Discharge, Electrostatic Discharge) has always been a troublesome problem in the field of integrated circuits. Doing a good job of electrostatic protection for integrated circuits is extremely important to the reliability of an electronic system. Nowadays, electronic devices tend to be miniaturized, high-density, and multi-functional. Especially, applications such as fashion consumer electronics and portable products that have strict requirements on the motherboard area are easily affected by electrostatic discharge. Static electricity exists all the time and everywhere. In the 1960s, with the emergence of MOS devices that are very sensit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/60
Inventor 董树荣曾杰钟雷郭维
Owner HAINING BERNSTEIN BIOTECH CO LTD
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