Manufacturing method of selective emitter cell

Abstract

The invention discloses a manufacturing method of a selective emitter cell, and the method comprises the steps: 1) removing the damage layer of a silicon chip and manufacturing a pile face on the surface of the silicon chip; 2) spraying phosphorus source and doping by utilizing laser on the silicon chip after the first step; 3) carrying out high-temperature chain-type diffusion for the sprayed and doped silicon chip to obtain p-n junctions of a zone outside the right positive electrode zone; 4) removing PSG on the surface of and p-n junctions around the silicon chip after the high-temperature chain-type diffusion; 5) depositing a layer of silicon nitride film which plays effects of reflection reduction and passivation on the surface of the silicon chip after the fifth step; 6) printing and sintering a back electrode, a back electric field, and a right electrode on the silicon chip with the silicon nitride film to metallize the electrodes and obtain the selective emitter cell; 7) testing each parameter of the selective emitter cell and grading the selective emitter cell according to the technology standard. The method can effectively improve the conversion efficiency of a solar cell and be used in production conveniently.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for manufacturing a selective emitter cell. Background technique [0002] As a clean and environmentally friendly new energy source, the application of solar cells is becoming more and more popular. But the cost of this battery is relatively high, which limits its rapid popularization. In order to reduce costs, it is necessary to continuously adopt new technologies to improve the conversion efficiency of solar cells. Among them, the selective emitter cell is a new process with simple process and can effectively improve the efficiency of solar cells. Based on the principle of selective emitter cells, there are various ways to realize this structure. However, many of these methods have cumbersome process steps and high cost, and are not suitable for industrial production. [0003] The production process of conventional solar cells is as follows: figure 1 mentioned...

AI Technical Summary

Problems solved by technology

In this way, after laser doping, the phosphorus source on the surface needs to be treated twice, the process steps are cumbersome, and the cost is high; on the other hand, in the prior art, high-temperature diffusion is performed before spraying the phosphorus source and laser doping to form a p-n junction. , the loading and unloading principles of the two devices are different, so it is not easy to connect the two devices, which is not conducive to the promotion of industrial automation

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