Silicon-penetrating through hole with control electrode and manufacturing method thereof

Abstract

The invention discloses a silicon-penetrating through hole with a control circuit. The through hole includes a substrate, a conductive electrode, a vertical transistor and a conducting layer, wherein the conductive electrode penetrates through the substrate; the vertical transistor includes a source electrode, a channel and a drain electrode, which are arranged on the conductive electrode and the channel is arranged between the source electrode and the drain electrode; a gate is arranged in the substrate; a gate dielectric layer is arranged between the channel and the gate; and the conducting layer is arranged on the drain electrode of the vertical transistor.

Description

technical field [0001] The present invention relates to a through-silicon via and a manufacturing method thereof, in particular to a through-silicon via with a control electrode and a manufacturing method thereof. Background technique [0002] In the modern information society, micro-processing systems composed of integrated circuits (ICs) have long been widely used in all aspects of life, such as automatic control of home appliances, mobile communication equipment, personal computers, etc., are integrated use of the circuit. With the advancement of technology and the various imaginations of electronic products in human society, integrated circuits are also developing in a more diverse, more sophisticated, and smaller direction. [0003] Generally, integrated circuits are formed through dies produced in existing semiconductor processes. The process of manufacturing crystal grains begins with the production of a wafer: first, multiple regions are distinguished on a wafer, a...

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Problems solved by technology

Although such a design is helpful to the design of the circuit, it also increases the complexity of each chip manufacturing process.

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