Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Methods for enhancing p-type doping in III-V semiconductor films

A III-V, semiconductor technology, applied in the field of doped III-V semiconductor film, can solve problems such as lack of understanding

Inactive Publication Date: 2013-10-23
UNIV OF UTAH RES FOUND
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the understanding of the fundamental doping mechanism in relation to surfactants is still poor because direct observation of the microscopic doping process is not possible

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Methods for enhancing p-type doping in III-V semiconductor films
  • Methods for enhancing p-type doping in III-V semiconductor films
  • Methods for enhancing p-type doping in III-V semiconductor films

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0022]First-principles calculations for the incorporation of Zn, Mg, Be, and Cd into GaP films (001) under the influence of surface Sb and H. Sb alone was found to have little effect on the film doping energy of all dopants in the GaP film, and the film doping energy was significantly reduced by Sb only in the presence of H also. Also, surface H alone would not function effectively without Sb. Without intending to be bound by any particular theory of the invention, the inventors believe that it is the combined effect of Sb and H (dual surfactant effect) that makes the p-type doping process thermodynamically favorable. The role of Sb in generating the dual surfactant effect is to serve as an electron pool to accommodate the redistribution of electrons, similar to the concept of ECR ​​summarized in semiconductor surfaces with metallic elements [14]. The role of H is to replenish an electron lost from the p-type dopant, so that the system can meet the ECR[15]. It is experimenta...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.

Description

technical field [0001] The invention relates to the field of epitaxial growth, in particular to a method for doping III-V semiconductor films. Government Rights Reference [0002] This invention was made with government support under Grant No. DE-FG02-04ER46148 awarded by the US Department of Energy. [0003] Cross-References to Related Applications [0004] This application claims the benefit of US Provisional Application No. 61 / 407657, filed October 28, 2010, the contents of which are hereby incorporated by reference in their entirety. Background technique [0005] Surfactants have been shown to be effective in controlling film microstructure, composition, and morphology during epitaxial growth, and thereby improving film properties and device performance. Copel et al first used As as a surfactant in the growth of Si / Ge / Si(001) in 1989 to inhibit the formation of islands [1]. Surfactant effects can affect crystal growth in various ways. For example, surfactants can al...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8252
CPCH01L21/02543H01L21/0262H01L21/36H01L21/02538H01L21/02579H01L21/02581Y10S117/913H01L21/265H01L21/8252
Inventor 冯·柳杰拉尔德·斯特林费洛俊逸·朱
Owner UNIV OF UTAH RES FOUND
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com