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34results about "Crystal growth process" patented technology
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Method of manufacturing crystalline film, method of manufacturing crystalline-film-layered substrate, method of manufacturing thermoelectric conversion element, and thermoelectric conversion element
ActiveUS20050178424A1Not to damageThermoelectric device with peltier/seeback effectThermoelectric device manufacture/treatmentWater vaporOptoelectronics
It is often the case that a substrate suitable for epitaxial growth does not match a substrate desirable for the use in functional elements such as thermoelectric conversion elements or the like. The present invention makes it possible to separate a predetermined layered structure formed on a substrate therefrom through an action of water vapor. A method of manufacturing a crystalline film of the present invention includes the steps of: epitaxially growing on a substrate a crystalline film including a layered structure so that the layered structure comes into contact with the substrate; contacting water vapor supplied from a water vapor source with the layered structure in a chamber; and separating the layered structure that has been contacted with the water vapor from the substrate to obtain the crystalline film. The layered structure has a layer containing an alkali metal, and a layer containing an oxide of at least one element selected from the group consisting of Co, Fe, Ni, Mn, Ti, Cr, V, Nb, and Mo.
Owner:PANASONIC CORP
System and process for processing a plurality of semiconductor thin films which are crystallized using sequential lateral solidification techniques
InactiveUS20060134890A1Semiconductor/solid-state device manufacturingThin material handlingBeam sourceIrradiation
A process and system are provided for processing at least one section of each of a plurality of semiconductor film samples. In these process and system, the irradiation beam source is controlled to emit successive irradiation beam pulses at a predetermined predetermined repetition rate. Using such emitted beam pulses, at least one section of one of the semiconductor film samples is irradiated using a first sequential lateral solidification (“SLS”) technique and / or a first uniform small grained material (“UGS”) techniques to process the such sections) of the first sample. Upon the completion of the processing of this section of the first sample, the beam pulses are redirected to impinge at least one section of a second sample of the semiconductor film samples. Then, using the redirected beam pulses, such sections) of the second sample are irradiated using a second SLS technique and / or a second UGS technique to process the at least one section of the second sample. The first and second techniques can be different from one another or substantially the same.
Owner:THE TRUSTEES OF COLUMBIA UNIV IN THE CITY OF NEW YORK
Controlled cleaving process
InactiveUS20060141747A1Good removal effectAvoid the possibility of damageDecorative surface effectsLayered productsHigh concentrationEnergy source
A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
Owner:SILICON GENERAL CORPORATION
Metal cluster-carrying metal oxide support and process for production thereof
InactiveUS7820585B2Particle growth can be suppressedHigh affinityMaterial nanotechnologyInternal combustion piston enginesMetal clustersDendrimer
Owner:TOYOTA JIDOSHA KK
Strong, non-magnetic, cube textured alloy substrates
A warm-rolled, annealed, polycrystalline, cube-textured, {100}<100>, FCC-based alloy substrate is characterized by a yield strength greater than 200 MPa and a biaxial texture characterized by a FWHM of less than 15° in all directions.
Owner:UT BATTELLE LLC
Strong, non-magnetic, cube textured alloy substrates
A warm-rolled, annealed, polycrystalline, cube-textured, {100}<100>, FCC-based alloy substrate is characterized by a yield strength greater than 200 MPa and a biaxial texture characterized by a FWHM of less than 15° in all directions.
Owner:UT BATTELLE LLC
Laser processing apparatus and laser processing process
InactiveUS20070141859A1Avoid vibrationSimple methodSolid-state devicesSemiconductor/solid-state device manufacturingProduction rateLaser processing
A laser processing process which comprises laser annealing a silicon film 2 μm or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more. A laser processing apparatus which comprises a laser generation device and a stage for mounting thereon a sample provided separately from said devices to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.
Owner:SEMICON ENERGY LAB CO LTD
Method of manufacturing crystalline film, method of manufacturing crystalline-film-layered substrate, method of manufacturing thermoelectric conversion element, and thermoelectric conversion element
ActiveUS7351906B2Not to damageThermoelectric device with peltier/seeback effectThermoelectric device manufacture/treatmentWater vaporOptoelectronics
Owner:PANASONIC CORP
Semiconductor device manufacturing method and display device
InactiveUS20080258154A1Improve productivityReduce adverse effectsTransistorSolid-state devicesDisplay deviceLight beam
Disclosed herein is a semiconductor device manufacturing method for performing an annealing process of irradiating a semiconductor film on which element forming areas including thin film transistor forming areas are arranged in a two-dimensional pattern with energy beams using a plurality of irradiating optical systems, wherein in the annealing process, an area irradiated with the energy beams is divided into a single beam irradiated area irradiated by each of the plurality of irradiating optical systems with an energy beam singly and a boundary area situated between single beam irradiated areas adjacent to each other and irradiated by both of two irradiating optical systems performing beam irradiation of the single beam irradiated areas with energy beams.
Owner:SONY CORP
Light irradiation apparatus, crystallization apparatus, crystallization method and device
InactiveUS20060027762A1Improve fill rateExcellently maintainedPhotomechanical apparatusSemiconductor/solid-state device manufacturingLight irradiationPhase difference
A light irradiation apparatus includes a light modulation element which has a phase step having a phase difference substantially different from 180°, an illumination optical system which illuminates the light modulation element, and an image formation optical system which forms, on an irradiation surface, a light intensity distribution based on a light beam phase-modulated by the light modulation element. The illumination optical system illuminates the light modulation element with an illumination light beam inclined in a direction normal to a step line of the phase step.
Owner:ADVANCED LCD TECH DEVMENT CENT
Method for producing crystallographically-oriented ceramic
InactiveUS20080295948A1Enhance crystallographic orientationSimple processPiezoelectric/electrostrictive device manufacture/assemblyCeramic layered productsCrystal planeInorganic materials
A method for producing a crystallographically-oriented ceramic includes the steps of forming a first sheet with a thickness of 10 μm or less containing a first inorganic material in which grain growth occurs at a first temperature or higher and a second sheet containing a second inorganic material in which grain growth occurs at a second temperature higher than the first temperature, laminating one or more each of the first and second sheets to form a laminated body, firing the laminated body at a temperature equal to or higher than the first temperature and lower than the second temperature to cause grain growth in the first inorganic material, and then firing the laminated body at a temperature equal to or higher than the second temperature to cause grain growth in the second inorganic material in the direction of a crystal plane of the first inorganic material.
Owner:NGK INSULATORS LTD
Semiconductor device manufacturing method and display device
InactiveUS7919399B2Eliminate the effects ofImprove productivityTransistorSolid-state devicesDisplay deviceLight beam
Owner:SONY CORP
Laser processing apparatus and laser processing process
InactiveUS7179726B2Avoid vibrationSimple methodSolid-state devicesSemiconductor/solid-state device manufacturingProduction rateLaser processing
A laser processing process which comprises laser annealing a silicon film 2 μm or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more.A laser processing apparatus which comprises a laser generation device and a stage for mounting thereon a sample provided separately from said device, to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.
Owner:SEMICON ENERGY LAB CO LTD
Method of deciding focal plane and method of crystallization using thereof
ActiveUS20050139580A1Shorten crystallization timeLow costSemiconductor/solid-state device manufacturingWelding/soldering/cutting articlesComputational physicsLaser beams
A crystallization method is provided which improves a crystallization process by deciding a best-fit focal plane for a laser beam using a test mask and then applying the decided best-fit focal plane to the crystallization process. The crystallization method includes loading a test mask on a mask stage; deciding a best-fit focal plane by performing a crystallization test using the test mask, checking the test result and deciding conditions of a best-fit focal plane from the test result; moving the mask stage to a position corresponding to the best-fit focal plane; loading a mask for crystallization process onto the moved mask stage; and performing the crystallization process using the mask for crystallization process.
Owner:LG DISPLAY CO LTD
Method for forming a semiconductor device
InactiveUS6919239B2Reduce probabilityHigh melting pointSolid-state devicesSemiconductor/solid-state device manufacturingLaser lightSemiconductor
A method for forming a semiconductor device is disclosed. The method comprises the step of irradiating a laser light to a surface of a semiconductor through a mask provided on said surface in an atmosphere comprising an impurity of one conductivity type to diffuse said impurity into a region of said semiconductor.
Owner:SEMICON ENERGY LAB CO LTD
Method for preparing iron silicide nano wires
ActiveCN101549869AStrong reductionSave energyNanostructure manufactureMetal silicidesIron powderProduct gas
The invention relates to a method for preparing iron silicide nano wires, which particularly comprises the following steps: a growing device is provided and comprises a heating furnace and a reaction chamber, a certain amount of iron powder and a growing base are provided and are arranged in the reaction chamber at intervals, silicon source gas is charged into the reaction chamber, the reaction chamber is heated to be 600-1200 DEG C, and the iron silicide nano wires are obtained by growing on the growing base.
Owner:TSINGHUA UNIV +1
Method for manufacturing nitride semiconductor device
ActiveUS20100151658A1Avoid crackingPrevent suctionOptical wave guidanceLaser detailsNitride semiconductorsMaterials science
A method for manufacturing a nitride semiconductor device, comprises epitaxially growing a semiconductor layer of a GaN-based material on the Ga surface of a GaN substrate while the GaN substrate is mounted on a substrate holder the substrate warping during the epitaxial growth so that a epitaxial deposit is deposited on the N surface of the substrate; and subjecting the N surface of the GaN substrate to vacuum suction after the epitaxial growth of the semiconductor layer; removing the epitaxial deposit from the N side of the GaN substrate after the semiconductor layer has been epitaxially grown, and before the N surface of the n-type GaN substrate is subjected to vacuum suction.
Owner:MITSUBISHI ELECTRIC CORP
Controlled process and resulting device
InactiveUS8835282B2Good removal effectAvoid the possibility of damageSemiconductor/solid-state device manufacturingAdhesivesMulti materialAnalytical chemistry
A method for forming a multi-material thin film includes providing a multi-material donor substrate comprising single crystal silicon and an overlying film comprising GaN. Energetic particles are introduced through a surface of the multi-material donor substrate to a selected depth within the single crystal silicon. The method includes providing energy to a selected region of the donor substrate to initiate a controlled cleaving action in the donor substrate. Then, a cleaving action is made using a propagating cleave front to free a multi-material film from a remaining portion of the donor substrate, the multi-material film comprising single crystal silicon and the overlying film.
Owner:SILICON GENERAL CORPORATION
Optical waveguide and method of manufacture
InactiveUS20060018616A1Well formedSatisfactory crystal qualityOptical waveguide light guideNon-linear opticsOptical propertyWaveguide
Owner:NIPPON TELEGRAPH & TELEPHONE CORP
Controlled process and resulting device
InactiveUS20130143389A1Good removal effectAvoid the possibility of damageSemiconductor/solid-state device manufacturingAdhesivesMulti materialAnalytical chemistry
A method for forming a multi-material thin film includes providing a multi-material donor substrate comprising single crystal silicon and an overlying film comprising GaN. Energetic particles are introduced through a surface of the multi-material donor substrate to a selected depth within the single crystal silicon. The method includes providing energy to a selected region of the donor substrate to initiate a controlled cleaving action in the donor substrate. Then, a cleaving action is made using a propagating cleave front to free a multi-material film from a remaining portion of the donor substrate, the multi-material film comprising single crystal silicon and the overlying film.
Owner:SILICON GENERAL CORPORATION
Metal cluster-carrying metal oxide support and process for production thereof
InactiveUS20090099017A1Particle growth can be suppressedHigh affinityMaterial nanotechnologyCatalyst carriersMetal clustersDendrimer
The present invention provides a metal cluster-carrying metal oxide support wherein a metal cluster obtained by use of a dendrimer is prevented from migrating to the surface of support and being sintered, and a process for production thereof. The process for producing the metal cluster-carrying metal oxide support of the present invention comprises (a) coordinating a first metal ion to a dendrimer 10, (b) reducing the first metal ion coordinated to the dendrimer to precipitate a cluster 6a of the first metal in the dendrimer, (c) further coordinating a second metal ion 8 to the dendrimer, and (d) drying and firing the solution containing this dendrimer on a metal oxide support 9, wherein the oxide of the second metal is the same as the metal oxide constituting the metal oxide support, or a metal oxide capable of forming a composite oxide with the metal oxide constituting the metal oxide support. In the metal cluster-carrying metal oxide support of the present invention, the cluster 6a of the first metal is held by the oxide of the second metal 8 on the metal oxide support 9.
Owner:TOYOTA JIDOSHA KK
Method of cutting single crystals
ActiveUS20110318221A1Quality improvementImprove accuracyMetal-working apparatusSemiconductor/solid-state device manufacturingAngular deviationSingle crystal
An embodiment of the invention provides a single crystal cleaved from a larger crystal and having a cleavage surface that extends along a natural crystallographic plane of the single crystal, the cleavage surface produced by generating a stress field to propagate a crack in the larger crystal along the natural plane, so that during cracking by the stress field a magnitude of a derivative of an energy release rate, G(α), generated by the stress field at a front of the crack as a function of angular deviation, α, from the natural plane, is less than or equal to twice an effective step energy, βe, divided by a step height, h.
Owner:FREIBERGER COMPOUND MATERIALS
Laser apparatus, laser irradiation method, and manufacturing method of semiconductor device
InactiveUS20070195837A1Reduce flowReduce pressureSemiconductor/solid-state device manufacturingActive medium materialDevice materialIrradiation
Owner:SEMICON ENERGY LAB CO LTD
Optical waveguide and method of manufacture
InactiveUS20060018617A1Well formedSatisfactory crystal qualityOptical waveguide light guideNon-linear opticsOptical propertyWaveguide
An optical waveguide capable of having various characteristics and a method of manufacture thereof as well as a method of manufacturing a crystal film are provided. An optical functional material KTaxNb1-xO3 is used as an optical waveguide. The input optical signal is transmitted to the KTaxNb1-xO3 film. The KTaxNb1-xO3 film undergoes changes in optical property when an external voltage signal-is applied to the electrode. Therefore, as it passes through the KTaxNb1-xO3 film, the input optical signal is modulated by the characteristic change. The modulated optical signal is taken out as an output optical signal.
Owner:NIPPON TELEGRAPH & TELEPHONE CORP
Method for manufacturing nitride semiconductor device
ActiveUS7901966B2Avoid crackingPrevent suctionOptical wave guidanceLaser detailsPower semiconductor deviceNitride semiconductors
A method for manufacturing a nitride semiconductor device, comprises: epitaxially growing a semiconductor layer of a GaN-based material on the Ga surface of a GaN substrate while the GaN substrate is mounted on a substrate holder the substrate warping during the epitaxial growth so that a epitaxial deposit is deposited on the N surface of the substrate; and subjecting the N surface of the GaN substrate to vacuum suction after the epitaxial growth of the semiconductor layer; removing the epitaxial deposit from the N side of the GaN substrate after the semiconductor layer has been epitaxially grown, and before the N surface of the n-type GaN substrate is subjected to vacuum suction.
Owner:MITSUBISHI ELECTRIC CORP
Semiconductor device manufacturing method and display device
InactiveCN101291554AHigh yieldImprove display qualityTransistorElectroluminescent light sourcesDisplay deviceSignal beam
Owner:SONY CORP
Laser irradiation method and laser irradiation apparatus, and method for fabricating semiconductor device
InactiveUS20050048704A1Improve production efficiencyEfficient executionFrom gel statePolycrystalline material growthDevice materialSingle crystal
When a laser beam is radiated on a semiconductor film under appropriate conditions, the semiconductor film can be crystallized into single crystal-like grains connected in a scanning direction of the laser beam (laser annealing). The most efficient laser annealing condition is studied. When a length of one side of a rectangular substrate on which a semiconductor film is formed is b, a scanning speed is V, and acceleration necessary to attain the scanning speed V of the laser beam relative to the substrate is g, and when V=(gb / 5.477)1 / 2 is satisfied, a time necessary for the laser annealing is made shortest. The acceleration g is made constant, however, when it is a function of time, a time-averaged value thereof can be used in place of the constant.
Owner:SEMICON ENERGY LAB CO LTD
Manufacture of dendrites and their use
InactiveUS20020027016A1Contact materialsSemiconductor/solid-state device detailsElectrical devicesEngineering
A technique for making acicular, branched, conductive dendrites, and a technique for using the dendrites to form a conductive compressible pad-on-pad connector are provided. To form the dendrites, a substrate is provided on which dendrites are grown, preferably on a metal film. The dendrites are then removed from the substrate, preferably by etching metal from the substrate. The so formed dendrites are incorporated into a compressible dielectric material, which then forms a compressible pad-on-pad connector between two conducting elements, such as connector pads on electrical devices, e.g. an I / C chip mounted on a substrate, such as a chip carrier.
Owner:IBM CORP
Method of fabricating a release substrate
ActiveUS20070077729A1Facilitated releaseFacilitate release of release rateLamination ancillary operationsDecorative surface effectsBond energySemiconductor materials
The invention relates to a method of fabricating a release substrate produced from semiconductor materials, the method comprising creating a reversible connection between two substrate release layers characterized in that the reversible connection is formed by a connecting layer produced using a first material as the basis, the connecting layer further comprising a nanoparticle concentrating zone of a second material disposed to facilitate release of the substrate, the first and second materials being selected to maintain the bonding energy of the reversible connection substantially constant even when the substrate is exposed to heat treatment.
Owner:S O I TEC SILICON ON INSULATOR THECHNOLOGIES
Methods for enhancing p-type doping in III-V semiconductor films
InactiveCN103370782ASemiconductor/solid-state device manufacturingCrystal growth processDopantP type doping
Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.
Owner:UNIV OF UTAH RES FOUND
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