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Semiconductor device manufacturing method and display device

一种制造方法、半导体的技术，应用在半导体/固态器件制造、半导体器件、照明装置等方向，能够解决增加扫描时间、降低产率、增加制造成本等问题，达到高显示质量、提高产率、抑制不利影响的效果

Inactive Publication Date: 2008-10-22
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when a semiconductor laser is used, the scanning time per unit area is increased due to the very small size of the beam spot, which greatly reduces the yield and increases the manufacturing cost, etc.

Method used

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  • Semiconductor device manufacturing method and display device
  • Semiconductor device manufacturing method and display device
  • Semiconductor device manufacturing method and display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] Hereinafter, a method of manufacturing a semiconductor device and a display apparatus according to embodiments of the present invention will be described with reference to the accompanying drawings.

[0027] [General configuration of display device]

[0028] First, the general configuration of a display device will be described by taking an organic EL display device as an example.

[0029] figure 1 is an auxiliary schematic diagram illustrating an example of a general configuration of an organic EL display device.

[0030] figure 1 The shown display device is, for example, an active or passive type very thin organic EL display device driven by TFTs. The display device is formed by disposing the driving panel 210 and the sealing panel 220 so that the driving panel 210 and the sealing panel 220 face each other, and providing the adhesive layer 230 formed of thermosetting resin or ultraviolet curable resin between the driving panel 210 and the sealing panel 220 to la...

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PUM

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Abstract

The invention provides a manufacturing method of a semiconductor device and a display device. The manufacturing method of the semiconductor device is used for processing to adopt energy beams used for a plurality of irradiating optical systems to irradiate an annealing technique of a semiconductor film. An element forming area comprising a thin film transistor forming area is arrayed to a two-dimension pattern on the semiconductor film, wherein, in the annealing technique, the area irradiated by the energy beams is divided into a signal beam irradiating area and a boundary area, each one of aplurality of the irradiating optical systems uses the energy beams to signally irradiate the signal beam irradiating area, and the boundary area is located between adjacent signal beam irradiating areas and is irradiated by the energy beams used for two irradiating optical systems which process beam irradiation of the signal beam irradiating area.

Description

technical field [0001] The present invention relates to a manufacturing method of a semiconductor device and a display device suitable for manufacturing a thin film transistor (hereinafter abbreviated as "TFT") substrate used in, for example, a liquid crystal display device or an organic electroluminescence device, the display device comprising Semiconductor film produced by this method. Background technique [0002] When forming a high value-added active matrix type liquid crystal display device called a system liquid crystal, forming an organic electroluminescent display device (hereinafter simply referred to as "organic EL element") using an organic electroluminescence element (hereinafter simply referred to as "organic EL element") Organic EL display device"), etc., usually use a TFT substrate with crystalline silicon. The TFT substrate is generally manufactured by forming an amorphous semiconductor film or a relatively small-sized polycrystalline semiconductor film on ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05B33/10H05B33/14H01L21/20H01L21/336H01L29/786
CPCH01L51/5281Y10S117/904H01L27/1214H01L27/3211H01L27/1285H10K59/35H10K59/8791H10K50/86
Inventor 荒井俊明
Owner SONY CORP
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