Unlock instant, AI-driven research and patent intelligence for your innovation.

Image sensor device and method

An image sensor and device technology, applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve problems such as interference operation, crosstalk, and reduction of image sensor accuracy and efficiency

Active Publication Date: 2016-05-18
TAIWAN SEMICON MFG CO LTD
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, adjacent pixel areas may interfere with each other's operation, so-called crosstalk
Crosstalk can reduce image sensor accuracy and efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Image sensor device and method
  • Image sensor device and method
  • Image sensor device and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] The making and using of the examples are discussed in detail below. It should be appreciated, however, that the embodiments provide many applicable concepts that can be implemented in a wide variety of specific contexts. The specific embodiments discussed are merely specific ways to make and use the embodiments, and do not limit the scope of the embodiments.

[0035] Embodiments will be described in the context of a complementary metal oxide semiconductor (CMOS) backside illuminated image sensor. However, other embodiments may also be applicable to other image sensors and other semiconductor devices.

[0036] now refer to figure 1 , shows an image sensor 100 comprising a grid or array of backside illuminated pixel regions 101 . Image sensor 100 may also include a logic region 103 adjacent to the array of pixel regions 101 . Logic region 103 may have other circuitry and contacts for input and output connections to and from the array of pixel regions 101 . The logic ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A system and method for reducing cross-talk between photosensitive diodes is provided. In an embodiment a first color filter is formed over a first photosensitive diode and a second color filter is formed over a second photosensitive diode, and a gap is formed between the first color filter and the second color filter. The gap will serve to reflect light that otherwise would have crossed from the first color filter to the second color filter, thereby reducing cross-talk between the first photosensitive diode and the second photosensitive diode. A reflective grid may also be formed between the first photosensitive diode and the second photosensitive diode in order to assist in the reflection and further reduce the amount of cross-talk.

Description

technical field [0001] The present invention relates to image sensor devices and methods. Background technique [0002] CMOS image sensors typically utilize an array of photodiodes formed within an array of pixel regions on a semiconductor substrate to detect when light strikes the photodiodes. A transfer transistor may be formed adjacent to each photodiode in each pixel region to transfer a signal generated by the detected light within the photodiode for a desired time. Such a photodiode and transfer transistor enable image capture at a desired time by operating the transfer transistor at a desired time. [0003] CMOS image sensors can typically be formed in either a front-side illumination configuration or a back-side illumination configuration. In a front-side illumination configuration, light passes from the front side of the image sensor where the transfer transistors have been formed to the photodiodes. However, in this configuration, the light is forced through the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/14685H01L27/14609H01L27/14621H01L27/14629H01L27/1464H01L27/14689
Inventor 林政贤杨敦年刘人诚洪丰基蔡双吉
Owner TAIWAN SEMICON MFG CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com