Apparatus for backside EMMI failure analysis and failure analysis method thereof

Abstract

The invention discloses an apparatus for the backside EMMI failure analysis. The apparatus comprises a PVC circuit board and a signal input and output pedestal; a transparent synthetic glass sheet is arranged in the center of the PVC circuit board, and a plurality of metal pins are arranged in the periphery of the synthetic glass sheet; circuit board metal pads are arranged at the four corners of the PVC circuit board respectively; each of the metal pins is connected with a jumper wire interface through a metal wire, and the jumper wire interface is connected with the four circuit board metal pads through metal wires respectively; and the signal input and output pedestal comprises a pedestal body, pedestal metal pads are arranged at the four corners of the pedestal body respectively, and the positions of the pedestal metal pads correspond to the positions of the circuit board metal pads. The apparatus allows the backside EMMI failure analysis to simply, rapidly and reliably realize the failure point positioning, and the positioning time of failure defects to be shortened to several hours from original several days. The invention also discloses a method for the backside EMMI failure analysis.

Description

technical field [0001] The invention relates to a failure analysis equipment of a semiconductor device, in particular to a device for failure analysis of backside EMMI. The invention also relates to a backside EMMI failure analysis method. Background technique [0002] For semiconductor failure analysis (FA), infrared emission microscope (IR Emission Microscope, EMMI) is a very efficient defect localization analysis tool, which can capture the photons emitted by electron-hole recombination in semiconductor components, The detectable wavelength is about 350-1100nm. Therefore, EMMI (luminescent microscope) can be widely used to detect leakage currents generated by various component defects in IC (semiconductor), such as Gate oxide defects (gate oxide defects), Leakage defects (leakage defects), Latch up (gate lock) , ESD failure (electrostatic failure), etc. [0003] Because most of the defects in IC devices show weak luminescence when the chip is working, EMMI can locate t...

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Problems solved by technology

[0008] Due to space limitations, it is impossible to have too many probes, and generally only 5 to 6 pins can be connected; at the same time, the area of ​​the contact point between the probe and the metal wire is small and not fixed, so it is necessary to balance 5 to 6 pins. 6 needles, it is very difficult to ensure good contact at the same time, it takes a long time, the operation is difficult, and the repeatability is poor

Moreover, due to the limitation of probes, most of the test functions that require multiple signal control are greatly limited

[0009] In addition, this backside EMMI failure analysis method is only applicable to packaged products, and it takes several working days to complete the precise location of a single defect area, especially when multiple signal inputs are required

In the context of the current rapid development of semiconductor technology, the continuous reduction of device feature size, and the continuous rise of integration, this failure analysis method is not acceptable due to time delays and signal input limitations. The analysis of the mechanism poses great challenges

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