High-precision reference voltage source
A reference voltage source and reference voltage technology, applied in the direction of adjusting electrical variables, control/regulation systems, instruments, etc., can solve the problem of high temperature coefficient, achieve the effect of simple preparation process, simple circuit principle, and low temperature coefficient of reference voltage
Inactive Publication Date: 2015-05-20
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF5 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, due to the non-linearity of the BJT collector current, the temperature coefficient of the reference voltage source with only one medium compensation is relatively high
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0044] Below in conjunction with accompanying drawing, describe technical scheme of the present invention in detail:
[0045] For the convenience of description, the first to fifteenth PMOS transistors are represented by MP11, MP12, MP13, MP14, MP21, MP22, MP23, MP24, MP31, MP32, MP33, MP34, MP41, MP42, and MP43. The ninth NMOS is represented by MN01, MN02, MN15, MN16, MN35, MN36, MN37, MN44, and MN45 in sequence, the first to fourth resistors are represented by R17, R25, R26, and R27 in sequence, and the first to second operational amplifiers are represented by A1, A2 represents, and the first capacitor is represented by C38.
[0046] Such as figure 1 As shown, the reference voltage source of the present invention includes a reference current generation module, a reference voltage generation module, MN01 and MN02, the first output terminal I1 of the reference current generation module and the gate and drain of MN01 and the reference voltage generation module The first input...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention relates to the integrated circuit technique, in particular to a high-precision reference voltage source. The high-precision reference voltage source is characterized in that a reference current generation module, a reference voltage generation module, a first NMOS tube and a second NMOS tube are included; a first output end of the reference current generation module is connected with a grid electrode and a drain electrode of the first NMOS tube, and a first input end of the reference voltage generation module; a second output end of the reference current generation module is connected with a grid electrode and a drain electrode of the second NMOS tube, and a second input end of the reference voltage generation module; a third output end of the reference current generation module is connected with a third input end of the reference voltage generation module; a power source end of the reference current generation module and a power source end of the reference voltage generation module are both connected with a power source VDD; a grounded end of the reference current generation module, a grounded end of the reference voltage generation module, a source electrode of the first NMOS tube and a source electrode of the second NMOS tube are all grounded. The high-precision reference voltage source has the advantages of being simple in circuit principle and low in temperature coefficient of reference voltage.
Description
technical field [0001] The invention relates to integrated circuit technology, in particular to a pure MOS high-precision reference voltage source with a new compensation method. Background technique [0002] The characteristics of high power supply rejection ratio and low temperature coefficient of the reference voltage source make it indispensable in some analog circuits, digital-analog hybrid circuits and pure digital circuits, such as in oscillators, phase-locked loops, Digital-to-analog conversion, data converters and other circuits. The stability of the reference voltage source determines the realization of the function and performance of the circuit to a large extent. In harsh temperature environments, the deviation of the reference voltage may directly lead to system chaos. [0003] The traditional reference voltage source uses a bandgap reference voltage source. Its working principle is to make ΔVbe with a positive temperature coefficient (the difference between t...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): G05F3/26
Inventor 方健王贺龙谷洪波潘华袁同伟黄帅
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA