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Semiconductor device manufacturing method and semiconductor device

A device manufacturing method and semiconductor technology, which is applied in the field of semiconductor device and semiconductor device manufacturing, and can solve problems such as focus defects that have not been completely solved

Active Publication Date: 2016-02-17
CSMC TECH FAB2 CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this does not completely solve the problem of focusing defects

Method used

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  • Semiconductor device manufacturing method and semiconductor device
  • Semiconductor device manufacturing method and semiconductor device

Examples

Experimental program
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Embodiment Construction

[0013] like figure 1 Shown is a cross-sectional view of a semiconductor device with a two-layer interconnection structure. The semiconductor device 10 includes a first layer 110 and a second layer 120 stacked in sequence, and the first layer 110 and the second layer 120 are interconnected.

[0014] The first layer 110 includes a silicon substrate 111 , a silicon oxide layer 112 formed on the surface of the silicon substrate 111 , and a first metal layer 113 formed on the silicon oxide layer 112 . There are a plurality of contact holes 114 on the silicon oxide layer 112 , and the contact holes 114 are filled with metal filled in the metallization process, so that the first metal layer 113 is electrically connected to the silicon substrate 111 . An engraved mark 130 is also provided on the silicon substrate 111, and the engraved mark 130 may include a plurality of marks and is generally arranged on the outer edge of the wafer.

[0015] The second layer 120 includes a first die...

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PUM

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Abstract

The invention discloses a method for manufacturing a semiconductor device, which includes a step of depositing a dielectric layer of multiple functional layers, a step of forming a contact hole or a through hole, and a step of forming a metal layer. The step of forming a contact hole or a through hole and the step of forming a metal layer In the forming step, it includes the step of photolithographically exposing the area on the dielectric layer and the metal layer corresponding to the engraved mark photolithography, and on at least one functional layer, the photolithographically corresponding area corresponding to the engraved mark is photolithographically exposed. The step of exposing is only for the metal layer. Also disclosed is a semiconductor device obtained by the method. The method and device do not affect the reading of the engraved mark, and can avoid the problem of focusing defects in the vicinity of the engraved mark.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a semiconductor device manufacturing method and a semiconductor device. Background technique [0002] In the semiconductor manufacturing process, especially in the photolithography process on the wafer, in order to mark and distinguish the wafer, it is necessary to mark the wafer with a marking. Marking methods include ink marking and laser marking, which can be formed on the front or back of the wafer. Marks formed on the back of the wafer are easily peeled off or worn out to become unreadable. Therefore, it is a better solution to form the marking mark on the front side of the wafer. [0003] Since the engraved mark is formed on the front side of the wafer, in order to keep it in a readable state, the traditional technology also exposes the engraved mark in each level of photolithography process. In addition, after subsequent lithography and edge washing operations, the thickness o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L23/544H01L23/528
CPCG03F9/708H01L23/544H01L2223/54433H01L2223/54453H01L2924/0002H01L2924/00G03F7/20H01L21/00
Inventor 杨鑫
Owner CSMC TECH FAB2 CO LTD