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Semiconductor component manufacturing method and semiconductor component

A device manufacturing method and semiconductor technology, applied in the field of semiconductor devices and semiconductor device manufacturing, can solve problems such as focusing defects that are not completely solved

Active Publication Date: 2013-12-04
CSMC TECH FAB2 CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this does not completely solve the problem of focusing defects

Method used

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  • Semiconductor component manufacturing method and semiconductor component
  • Semiconductor component manufacturing method and semiconductor component

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Experimental program
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Embodiment Construction

[0013] Such as figure 1 Shown is a cross-sectional view of a semiconductor device with a two-layer interconnection structure. The semiconductor device 10 includes a first layer 110 and a second layer 120 stacked in sequence, and the first layer 110 and the second layer 120 are interconnected.

[0014] The first layer 110 includes a silicon substrate 111 , a silicon oxide layer 112 formed on the surface of the silicon substrate 111 , and a first metal layer 113 formed on the silicon oxide layer 112 . There are a plurality of contact holes 114 on the silicon oxide layer 112 , and the contact holes 114 are filled with metal filled in the metallization process, so that the first metal layer 113 is electrically connected to the silicon substrate 111 . An engraved mark 130 is also provided on the silicon substrate 111, and the engraved mark 130 may include a plurality of marks and is generally arranged on the outer edge of the wafer.

[0015] The second layer 120 includes a first ...

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PUM

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Abstract

Provided is a fabrication method for a semiconductor device (10). The method comprises: a deposition step of a dielectric layer (112, 121) of a plurality of functional layers (110, 120), a formation step of a contact hole (114) or a through-hole (123) and a formation step of a metal layer (113, 122). The formation step of the contact hole (114) or the through-hole (123) and the formation step of the metal layer (113, 122) comprise a step of performing photolithographic exposure on a region on the dielectric layer (112, 121) and the metal layer (113, 122) corresponding to the photolithography of a marking label (130). On at least one functional layer (110, 120), the step of performing photolithographic exposure on the region corresponding to the photolithography of the marking label (130) only aims at the metal layer (113, 122). Also provided is a semiconductor device (10) obtained by the above method. The method and device do not affect the reading of the marking label (130), and also can avoid the problem of defocusing in a vicinal region of the marking label (130).

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a semiconductor device manufacturing method and a semiconductor device. Background technique [0002] In the semiconductor manufacturing process, especially in the photolithography process on the wafer, in order to mark and distinguish the wafer, it is necessary to mark the wafer with a marking. Marking methods include ink marking and laser marking, which can be formed on the front or back of the wafer. Marks formed on the back of the wafer are easily peeled off or worn out to become unreadable. Therefore, it is a better solution to form the marking mark on the front side of the wafer. [0003] Since the engraved mark is formed on the front side of the wafer, in order to keep it in a readable state, the traditional technology also exposes the engraved mark in each level of photolithography process. In addition, after subsequent lithography and edge washing operations, the thickness o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L23/544H01L23/528
CPCG03F9/708H01L21/00H01L2223/54453G03F7/20H01L23/544H01L2223/54433H01L2924/0002H01L2924/00
Inventor 杨鑫
Owner CSMC TECH FAB2 CO LTD