Reaction sputtering system based on oscillation-type reaction gas control

Abstract

The invention relates to a reaction sputtering system based on oscillation-type reaction gas control. The reaction sputtering system comprises a vacuum chamber, a reaction gas pipeline and a carrier gas pipeline; an anode wafer carrying platform and a cathode target material which face with each other are disposed in the vacuum chamber; the reaction sputtering system also comprises a gas flow control system, and the gas flow control system comprises a computer, a flow controller, a reaction gas mass flowmeter and a carrier gas mass flowmeter; the reaction gas mass flowmeter and the carrier gas mass flowmeter are respectively disposed in the reaction gas pipeline and the carrier gas pipeline; and the computer is used to control the reaction gas mass flowmeter via the flow controller and enable the reaction gas flow entering into the vacuum chamber to be a periodic oscillation flow. By employing the reaction gas flow with periodic oscillation, the reaction sputtering system helps to realize dynamic stabilization of a whole sputter process, and further to realize stable obtaining of needed metallic compound components.

Description

technical field [0001] The invention relates to the technology of preparing metal compound thin film by physical sputtering method, in particular to a reactive sputtering system based on oscillating reactive gas control. Background technique [0002] The reactive sputtering method is a commonly used method for preparing metal compound films. Its working principle is to introduce a certain concentration of reactive gas during the sputtering process, so that the metal ions react with the reactive gas during the sputtering process, thereby obtaining desired compound. [0003] The traditional reactive sputtering system structure includes: vacuum chamber, sputtering power supply, vacuum pump system, wafer transfer system, gas circuit and control system, etc. A wafer carrier is provided in the vacuum chamber for placing the sputtered wafer. A target device is provided on the top of the vacuum chamber, and the target device includes a base for placing the target, a cathode target...

AI Technical Summary

Problems solved by technology

Therefore, it is difficult to control the composition of the sputtered film in the traditional

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