Tunneling field effect transistor

Abstract

The invention discloses a tunneling field effect transistor comprising a gate electrode layer, a gate dielectric layer, a source region, a connected region and a drain region. The source region comprises a first source region body and a second source region body, the second source region body comprises an inner layer source region main body and an outer layer source region main body, the connected region comprises an expansion region body and a high-resistance region body, the material doping type of the inner layer source region main body and the material doping type of the outer layer source region main body are opposite, the forbidden bandwidth of a material of the inner layer source region main body is smaller than that of a material of the outer layer source region main body, and the contact face formed due to the fact that the outer layer source region main body covers the inner layer source region main body is a curved face. The tunneling field effect transistor has the advantages that the contact face of the outer layer source region main body and the inner layer source region main body is of a curved face structure, the contact area of the outer layer source region main body and the inner layer source region main body is increased, the probability of tunneling of a carrier through the contact face is increased, and therefore on-state current is increased and a good current drive ability is achieved.

Description

technical field [0001] The present application relates to the field of semiconductor devices, in particular to a tunneling field effect transistor. Background technique [0002] With the development of integrated circuits, power consumption has gradually become an important performance indicator. Field-effect transistors are the basic unit of integrated circuits, and the development of field-effect transistors with excellent performance and low power consumption has become the goal of pursuit. After the introduction of double-gate and triple-gate structures, as well as high-k and stress silicon processes in the manufacture of field effect transistors, the performance of field effect transistors has been significantly improved. However, the existing field effect transistors are limited by the drift diffusion mechanism, and the subthreshold slope cannot be lower than ln10 kTq, which makes it difficult to reduce the power supply voltage with the channel length under the same c...

AI Technical Summary

Problems solved by technology

However, the existing field effect transistors are limited by the drift diffusion mechanism, and the subthreshold slope cannot be lower than ln10 kTq, which makes it difficult to reduce the power supply voltage with the channel length under the same characteristics. The tunneling mechanism based on the PN junction The pass field effect transistor has attracted widespread attention due to its advantages of low power consumption and low subthreshold slope, and has become the main solution to break through this limitation.

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