Manufacturing method of light-emitting diode

Abstract

The invention relates to a method for preparing a light-emitting diode, which includes the following steps: providing a substrate, the substrate has an epitaxial growth surface; epitaxially growing a first semiconductor layer, an active layer and a second semiconductor layer on the epitaxial growth surface of the substrate in sequence. A semiconductor layer; a first optical symmetry layer is arranged on the surface of the second semiconductor layer away from the substrate; a metal plasma generation layer is arranged on the surface of the first optical symmetry layer away from the substrate; on the metal plasma generation layer forming a second optical symmetrical layer on the surface away from the base; forming a first electrode electrically connected to the first semiconductor layer; and forming a second electrode electrically connected to the second semiconductor layer.

Description

technical field [0001] The invention relates to a method for preparing a light-emitting diode, in particular to a method for preparing a light-emitting diode with a lateral structure. Background technique [0002] High-efficiency blue, green, and white light-emitting diodes made of gallium nitride semiconductor materials have remarkable features such as long life, energy saving, and environmental protection. They have been widely used in large-screen color displays, automotive lighting, traffic signals, multimedia displays, and optical communications. And other fields, especially in the field of lighting has broad development potential. [0003] A traditional light-emitting diode usually includes a substrate, an N-type semiconductor layer, a P-type semiconductor layer, an active layer arranged between the N-type semiconductor layer and the P-type semiconductor layer, and a P-type electrode (usually transparent electrode) and the N-type electrode disposed on the N-type semic...

AI Technical Summary

Problems solved by technology

[0004] However, in the light-emitting diodes prepared in the existing method, the near-field evanescent light waves (waves with an attenuation distance less than 20 nanometers) from the active layer cannot be emitted due to rapid attenuation during the outward radiation process, so they are limited to The interior of the semiconductor structure, until it is completely absorbed by the material in the light-emitting diode, affects the light extraction rate of the light-emitting diode

Images