Unlock instant, AI-driven research and patent intelligence for your innovation.

Method and apparatus for protecting and high-voltage isolation of low-voltage communication interface terminals

A terminal and isolation area technology, applied in the field of electronic systems, can solve the problems of voltage terminal isolation sensitivity circuit design layout and integration increase

Active Publication Date: 2016-03-16
ANALOG DEVICES INC
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, traditional solutions including stand-alone isolation devices can exhibit limitations due to excessive loading, voltage terminal isolation sensitivity, large area requirements, and increased complexity of circuit design layout and integration

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and apparatus for protecting and high-voltage isolation of low-voltage communication interface terminals
  • Method and apparatus for protecting and high-voltage isolation of low-voltage communication interface terminals
  • Method and apparatus for protecting and high-voltage isolation of low-voltage communication interface terminals

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] The following detailed description of certain implementations provides various descriptions of specific implementations of the invention. However, the invention can be embodied in a multitude of different ways as defined and covered by the claims. In the description, reference is made to the drawings, wherein like numerals indicate identical or functionally similar elements.

[0022] Terms such as above, below, over, etc. as used herein refer to the orientation of the device in the figures and should be interpreted accordingly. It should also be understood that since regions within a semiconductor device (e.g., a transistor) are defined by doping different portions of the semiconductor material with different impurities or different concentrations of impurities, discontinuous physical boundaries between different regions are not defined within the completed device. May not actually exist, but zones can change from one to another. Some of the boundaries shown in the fi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A high voltage isolation protection device with a built-in resistance trigger control (100) for a low voltage communication interface system in a mixed signal high voltage electronic circuit (105) is disclosed. According to one aspect, the protection device (100) includes a semiconductor structure configured to provide isolation between low voltage terminals and protect against transient events. The protection device includes a thyristor having an anode, a cathode and a gate, and a thyristor cathode-gate control region embedded in the protection device. The protection device (100) is configured to provide a plurality of built-in upstream paths to high power terminals and downstream paths to low power terminals at different voltage levels. The protection device also includes an independent built-in discharge path to a common substrate connected to a different low power voltage reference. The conductive paths can be placed into a single structure with double isolation regions (204, 206). As a result, the protection device enables superior robustness and compact protection solutions for smart power applications.

Description

technical field [0001] Implementations of the present invention relate to electronic systems, and more particularly to protection and high voltage isolation of low voltage interface terminal systems for mixed signal high voltage integrated circuits (ICs). Background technique [0002] Some electronic systems are configured to protect a circuit or components within a circuit from transient electrical events. A transient signal event may be in the form of an electrical signal of relatively short duration with rapidly changing voltage and high power. Transient signal events may include, for example, electrical overload or electrostatic discharge (EOS / ESD) events caused by the sudden release of electrical charge from an object or person into an electronic system. [0003] Transient signal events can damage integrated circuits (ICs) inside electronic systems due to overvoltage conditions and / or high power dissipation on the relatively small area of ​​the IC. The reliability of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02
CPCH01L27/0262
Inventor J·A·萨塞多
Owner ANALOG DEVICES INC