Electrode configurations for semiconductor devices

Abstract

A III-N semiconductor device can include an electrode-defining layer having a thickness on a surface of a III-N material structure. The electrode-defining layer has a recess with a sidewall, the sidewall comprising a plurality of steps. A portion of the recess distal from the III-N material structure has a first width, and a portion of the recess proximal to the III-N material structure has a second width, the first width being larger than the second width. An electrode is in the recess, the electrode including an extending portion over the sidewall of the recess. A portion of the electrode-defining layer is between the extending portion and the III-N material structure. The sidewall forms an effective angle of about 40 degrees or less relative to the surface of the III-N material structure.

Description

technical field [0001] The present invention relates to semiconductor electronic devices and, in particular, to devices having electrodes connected to field plates. Background technique [0002] To date, modern power semiconductor diodes such as high voltage P-I-N diodes as well as power transistors such as power MOSFETs and insulated gate bipolar transistors (IGBTs) are usually fabricated from silicon (Si) semiconductor material. More specifically, silicon carbide (SiC) power devices have been investigated due to their excellent properties. III-nitride (III-N) semiconductor devices are now emerging, which are promising in carrying large currents and supporting high voltages while offering very low resistance, high-voltage device operation, and fast switching times. As used herein, the term III-N or III-nitride material, layer, device, etc. means x In y Ga z A material or device composed of N compound semiconductor materials, where x+y+z is about 1. [0003] exist figu...

AI Technical Summary

Problems solved by technology

[0007] While sloped field plates are desirable for many applications, they can be difficult to reproducibly fabricate

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