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Capacitance type absolute pressure sensor and manufacturing method thereof

An absolute pressure sensor and a manufacturing method technology, applied in the field of sensors, can solve the problems that the airtightness of the bonding surface is not easy to be effectively guaranteed, the sensor cannot work normally for a long time, and the output drift of the micro-leakage sensor, etc., achieves reasonable structure and wide application range , the effect of high measurement accuracy

Inactive Publication Date: 2014-01-15
SHENYANG ACAD OF INSTR SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For some absolute pressure sensors with silicon-glass structure, the lead-out wires of the internal plate are connected to the external electrodes through the bonding surface. Can't work properly for a long time

Method used

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  • Capacitance type absolute pressure sensor and manufacturing method thereof
  • Capacitance type absolute pressure sensor and manufacturing method thereof
  • Capacitance type absolute pressure sensor and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Such as figure 1 As shown, a glass-silicon composite pole plate is fixed under the silicon movable pole plate, and the silicon movable pole plate is fixed with a silicon oxide layer 2 on both sides of the silicon wafer layer 1 polished on both sides. One end side of layer 1 is fixed with a metal conductive layer 3, and the thickness of the silicon layer is 380-420 microns; the glass-silicon composite pole plate is that the glass layer 4 is fixed on the top of the single crystal silicon material layer 5, and the center of the glass layer is With a through hole 6, a metal layer 8 is fixed on the silicon chip corresponding to the through hole on the glass layer, and an electrode layer 7 is fixed above the metal layer; a metal layer is also fixed on one end of the single crystal silicon material layer. Conductive layer 3.

[0026] see Figure 2~4 , the manufacturing method of the above-mentioned capacitive absolute pressure sensor is as follows: wherein the manufacturing ...

Embodiment 2

[0035] Such as figure 1 As shown, a glass-silicon composite pole plate is fixed under the silicon movable pole plate. The silicon movable pole plate is fixed with a silicon oxide layer on the central island part of both sides of the silicon wafer layer polished on both sides, and one end of the silicon wafer layer is A metal layer is fixed on the side of the silicon wafer layer, and the thickness of the silicon wafer layer is 380-420 microns; the glass-silicon composite pole plate is a glass layer fixed above the monocrystalline silicon material layer, and a through hole is provided in the center of the glass layer. A metal layer is fixed at the position of the through hole of the chip relative to the glass layer and at one end, and an electrode layer is fixed above the metal layer at the position of the through hole of the silicon chip relative to the glass layer.

[0036] see Figure 2~4 , the manufacturing method of the above-mentioned capacitive absolute pressure sensor i...

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Abstract

Provided is a capacitance type absolute pressure sensor and a manufacturing method thereof. The capacitance type absolute pressure sensor is characterized in that a silicon movable polar plate is formed by conducting thermal oxidation, anisotropic corrosion, photoetching and metal layer sputtering on a silicon wafer; a glass-silicon composite polar plate is formed by conducting thermal oxidation, anisotropic corrosion, photoetching, metal layer sputtering and static sealing-in on a monocrystal silicon material and a glass layer; finally static sealing-in is conducted on the glass-silicon composite polar plate and the silicon movable polar plate, and the capacitance type absolute pressure sensor is formed. According to a structure of the capacitance type absolute pressure sensor, an electrode is led out by utilizing a silicon material body, the electrode does not need to penetrate through a sealed bonding face, gas tightness connection of a capacitance vacuum cavity is effectively ensured, and long-term stable work of the sensor is ensured. A core part is achieved by adopting a silicon-glass-silicon structure, the influence caused by silicon-glass material difference is effectively reduced, and temperature excursion of the sensor is reduced. The Capacitance type absolute pressure sensor further has the advantages of being reasonable in structure, safe, reliable, wide in application range, high in measurement precision and the like.

Description

technical field [0001] The invention belongs to the technical field of sensors, and in particular relates to a capacitive absolute pressure sensor manufactured by using single crystal silicon material and fusion technology of microelectronics and micromachining and a manufacturing method thereof. Background technique [0002] Silicon capacitive pressure sensor is a new type of structural pressure sensor. Its core sensitive device is made of single crystal silicon material, which is made by the fusion technology of microelectronics and micromachining. Compared with the previous metal capacitance sensor, it has more obvious advantages in measurement accuracy and stability. The core sensitive device of the silicon capacitive sensor converts the external atmospheric pressure signal into the corresponding capacitance change, and the detection circuit converts the capacitance change into the required electrical signal, and the corresponding output signal can be obtained by process...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L9/12
Inventor 张治国李颖祝永峰刘剑郑东明张哲张娜
Owner SHENYANG ACAD OF INSTR SCI
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