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Vertical metal/insulation layer/metal mim capacitor and manufacturing method thereof

A technology of insulating layer and metal layer, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as increasing cost and increasing chip area

Active Publication Date: 2016-02-10
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The upper and lower plates of the capacitor are set horizontally. Since the size of the capacitor is proportional to the area of ​​the upper and lower plates, when the required capacitance is relatively large, a large area of ​​the upper and lower plates is required, which will increase the area of ​​the chip.
Moreover, a layer of mask must be set when the capacitor is manufactured, which increases the cost.

Method used

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  • Vertical metal/insulation layer/metal mim capacitor and manufacturing method thereof
  • Vertical metal/insulation layer/metal mim capacitor and manufacturing method thereof
  • Vertical metal/insulation layer/metal mim capacitor and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] The manufacturing method of the vertical MIM capacitor includes the following steps:

[0041] Step 1, see Figure 4 , and a certain lower metal layer 105 is formed on the upper end of the first insulating layer 101 . Wherein, part of the lower metal 105 is used for the lower end leads of the two sides of the vertical MIM capacitor.

[0042] Step 2, see Figure 5 , a second insulating layer 111 is formed on the upper end of the first insulating layer 101 and the upper end of a certain underlying metal 105 , and a hard mask layer 115 is deposited on the second insulating layer 111 . The thickness of the hard mask layer 115 is 1000 angstroms˜10000 angstroms.

[0043] Step 3, see Image 6 and forming an X-1 layer contact hole 106 above the X-1 layer metal layer 102 in the second insulating layer 111 .

[0044] Step 4, see Figure 7 , coat photoresist 108 above the second insulating layer 111 and in the contact hole 106 of the X-1 layer, and use photolithography to def...

Embodiment 2

[0054] The difference between this embodiment and the first embodiment is that, see Figure 16 As shown, normal lithography of the X-1 layer contact hole 106 is used, while leaving the position of the groove where the vertical MIM capacitor needs to be formed to be exposed. The width of the groove 110 is greater than the width of the contact hole of the layer, and then the groove 110 is formed by anisotropic dry etching, and the rest is the same as that of the first embodiment.

[0055] The first embodiment needs to add a layer of mask, while the second embodiment does not need to add any mask.

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Abstract

The invention discloses a vertical metal / insulating layer / metal MIM capacitor. Two grooves which are parallel to each other form in an insulating layer. The groove ceases above a certain lower layer of metal. The insulating layer between the two grooves forms the insulating layer of the capacitor. Two metal layers respectively forms on the two sides of the insulating layer of the capacitor. The metal layers form two metal conductive electrodes of the capacitor. A complete structure of the vertical metal / insulating layer / metal MIM capacitor forms. The two terminal electrodes are led out form the certain lower layer of metal of the lower end of the metal layer. The invention also discloses a manufacturing method of the vertical metal / insulating layer / metal MIM capacitor. When capacitors which are relatively large in capacitance are manufactured, through the adoption of the manufacturing method of the invention, the increase of the areas of chips can be avoided, and the precision of the capacitors can be raised.

Description

technical field [0001] The present invention relates to the field of semiconductor integrated circuits, in particular to a vertical MIM (metal / insulator / metal, metal / insulator / metal) capacitor. The invention also relates to a manufacturing method of the capacitor. Background technique [0002] Different capacitors are often used in semiconductor integrated circuits. Among them, MIM capacitors are often selected in integrated circuits such as radio frequency and embedded memory because of their good frequency and temperature characteristics. [0003] The schematic diagram of the cross-section of a traditional MIM capacitor is as follows figure 1 As shown in the figure, the part marked by the dotted frame is the MIM capacitor body; including the X-1 layer of metal (as the lower plate of the capacitor) 102, the upper plate metal layer (as the upper plate of the capacitor) 113, and located in The insulating layer 104 in the middle. The upper and lower plates of the capacitor...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/522H01L21/768
Inventor 刘俊
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP