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A kind of igbt special encapsulation material and preparation method thereof

A technology of packaging materials and raw materials, which is applied in the direction of electrical components, circuits, and electrical solid devices, can solve the problems of poor toughness, brittleness, and limitations of polyphenylene sulfide, and achieve easy operation, stable product quality, and improved durability. Effects of impact and electrical insulation properties

Active Publication Date: 2016-01-20
ZHUZHOU TIMES NEW MATERIALS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, polyphenylene sulfide has poor toughness and is prone to brittle cracks, so its application in areas with high impact performance requirements is limited; moreover, polyphenylene sulfide has moderate electrical insulation performance, and its relative tracking index (CTI) is usually less than 150. Applications in demanding areas of electrical insulation performance are limited

Method used

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  • A kind of igbt special encapsulation material and preparation method thereof
  • A kind of igbt special encapsulation material and preparation method thereof
  • A kind of igbt special encapsulation material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～ Embodiment 6

[0033] The polyphenylene sulfide is PPS-hb from Sichuan Deyang Chemical Co., Ltd., with a molecular weight of 48,000.

[0034] Ultra-high molecular weight polyethylene uses impact-resistant UHMWPE resin from Mitsui Chemicals of Japan.

[0035] Selection of compatibilizer: Examples 1-2 use a single maleic anhydride grafted polyethylene, examples 3-4 use a mixture of maleic anhydride grafted polyethylene and maleic anhydride grafted ethylene-propylene copolymer, examples 5-6 A mixture of maleic anhydride grafted polyethylene and maleic anhydride grafted ethylene-octene copolymer is selected.

[0036] The processing aid is a mixture in equal proportions of a silane stabilizer and an organic silicon lubricant, wherein the silane stabilizer selected in Examples 1-2 is dimethylbis(4-phenylaminophenoxy) silane, and the selected silane stabilizer in Examples 3-6 The silane stabilizer is a mixture of dimethylbis(4-phenylaminophenoxy)silane and dimethylbis{4-[(naphthyl-2)amino]phenoxy}...

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Abstract

The invention relates to a special packaging material for an insulated gate bipolar transistor (IGBT) and a preparation method of the special packaging material for IGBT, and belongs to the field of composite materials. The material comprises polyphenylene sulfide, ultra-high molecular weight polyethylene, inorganic oxide, glass fiber, compatilizer and processing agent; the packaging material is obtained through co-extrusion process. According to the packaging material, polyphenylene sulfide is compounded with ultra-high molecular weight polyethylene, shock resistance and electrical insulation performance of polyphenylene sulfide are improved, and inorganic nano-oxide such as titanium dioxide is added at the same time and is intensified by the glass fiber to obtain a composite material with excellent mechanical property, flame retardant property, weather-resistant performance, electrical insulation performance and thermal performance, thus enlarging the application range of the polyphenylene sulfide material and specially expanding the application in high-power IGBT packaging material.

Description

technical field [0001] The invention relates to a special packaging material for IGBT and a preparation method thereof, belonging to the field of composite materials. Background technique [0002] Insulated Gate Bipolar Transistor (InsulatedGateBipolarTransistor, IGBT) is a composite full-control voltage-driven power semiconductor with high input impedance and low conduction voltage drop, which is very suitable for high-voltage converter systems, such as AC motors, inverters, Traction transmission and other fields. IGBT packaging materials are required to have excellent mechanical properties, electrical insulation properties, flame retardant properties, aging resistance and heat resistance properties; in addition, because the IGBT housing usually has a complex cavity structure and injection molding is difficult, the housing and other components in the IGBT The module needs to be welded and packaged at a temperature higher than 200°C, and the prepared IGBT module is required...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08L81/02C08L23/06C08L51/06C08K9/06C08K7/14C08K3/22C08K3/36C08J5/08B29B9/06B29C47/92H01L23/29B29C48/92
CPCB29C48/04B29C48/92
Inventor 路宏伟李鸿岩姜其斌
Owner ZHUZHOU TIMES NEW MATERIALS TECH