Wafer loading disc for MOCVD (metal organic chemical vapor deposition) reactor and MOCVD reactor

A technology for reactors and wafers, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of not being able to maximize the use of the loading plate and uneven temperature in the peripheral area of ​​​​the surface, so as to prevent the reaction of reactants Diffuse into the area of ​​the heating device, improve equipment performance, and improve the effect of utilization

Active Publication Date: 2014-01-22
48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In order to overcome the inhomogeneous temperature in the peripheral region of the upper surface of the existing wafer carrier plate, the deficiency of the upper surface area of ​​the carrier plate cannot be utilized to the maximum extent, the present invention aims to provide a wafer carrier plate and an MOCVD reactor for an MOCVD reactor, The wafer carrier and heating device fully consider the edge thermal field of the wafer carrier, so that the edge area of ​​the wafer carrier can also be used, the utilization rate of the wafer carrier is improved, and the MOCVD single Batch output improves equipment performance

Method used

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  • Wafer loading disc for MOCVD (metal organic chemical vapor deposition) reactor and MOCVD reactor
  • Wafer loading disc for MOCVD (metal organic chemical vapor deposition) reactor and MOCVD reactor

Examples

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Embodiment Construction

[0031] A MOCVD reactor, such as figure 2 As shown, above the reactor is a gas distribution device (shower head) 102, below 102 is a wafer carrier 113, the upper surface of 113 has a circular groove for placing the wafer 105, and the lower surface is an annular protrusion 116, surrounding the ring The protrusion 116 is provided with a heat shield 106, and the annular protrusion 116 is also provided with an outer ring 107 of a heating device. The wafer carrier 113 is coupled to the rotating shaft 110 through the cone-shaped hole, and the wafer carrier 113 can rotate at a specified speed driven by the rotating shaft. Just below the wafer carrier 113 is provided with a ring heating body 104 in the heating device. There are several horizontal heat-insulation shielding layers 101 under the heating body in the heating device, and a cooling plate 112 with a cooling device is arranged below the heat-insulation shielding layer 101, and a cylindrical heat-insulation shielding layer 108...

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Abstract

The invention discloses a wafer loading disc for an MOCVD (metal organic chemical vapor deposition) reactor and an MOCVD reactor. In order to expand the range of a uniform-temperature field on the surface of the wafer loading disc to the greatest degree, the wafer loading disc for the MOCVD reactor comprises a wafer loading disc body, wherein a groove for placing a wafer is formed in the upper surface of the wafer loading disc body, and the periphery of the lower surface of the wafer loading disc body extends downward to form an annular bulge so that the whole wafer loading disc is of an inverted barrel shape. The MOCVD reactor is provided with the wafer loading disc with the annular bulge and a matched heater, wherein the heater is divided into an inner part, a middle part and an outer part, wherein an inner ring and an outer ring of the heater are vertically arranged in a cylindrical manner, and a middle ring is horizontally arranged in an omega shape. By adopting the wafer loading disc and the MOCVD reactor disclosed by the invention, the utilization efficiency of heat energy is improved; the heating device is separated from a reactant so as to better protect the heating device; meanwhile, the consistent-temperature area on the surface of the wafer loading disc is expanded, thereby increasing the single-batch output.

Description

technical field [0001] The invention relates to the field of metal-organic compound chemical vapor deposition equipment, in particular to a wafer carrier for an MOCVD reactor and an MOCVD reactor. Background technique [0002] MOCVD (Metal Organic Chemical Vapor Deposition) equipment, that is, Metal Organic Chemical Vapor Deposition equipment, is a high-tech and new technology highly concentrated equipment integrating computational fluid dynamics, heat transfer, system integration control, compound growth and other disciplines. , is the key equipment in the semiconductor industry. [0003] The wafer carrier and the heating device are the core components of the MOCVD reaction chamber, which directly determine the temperature uniformity between each wafer and each point inside the wafer. As we all know, the temperature field is the decisive factor to determine the quality of the deposited film. Therefore, an excellent wafer carrier and heating device is an important basis for...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/458
Inventor 魏唯罗才旺陈特超
Owner 48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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