A method of manufacturing a semiconductor device using a dummy gate

Abstract

The invention provides a method for using dummy grids to manufacture a semiconductor device. The method includes: providing a semiconductor substrate containing a first area and a second area; forming the first dummy grid on the first area of the substrate, and forming the second dummy grid on the second area of the substrate, wherein each of the first dummy grid and the second dummy grid comprises a grid dielectric layer, a covering layer, a grid barrier layer and a grid electrode layer which are sequentially stacked; forming a source drain in the substrate; using wet etching to remove the grid electrode layer of the first dummy grid to form a channel; filling the channel to form a metal grid. By the method, recess, caused by steps such as etching during the dummy grid replacement process, of the surface of the inter layer dielectric (ILD) layer can be eliminated, wider operation range can be achieved, and accordingly device performance and the semiconductor device process are improved.

Description

technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, more precisely, the present invention relates to a method for manufacturing semiconductor devices using dummy gates. Background technique [0002] In the process of manufacturing a semiconductor device using a dummy gate, it usually includes forming a dummy gate, source and drain on the substrate, and then removing the corresponding part on the dummy gate and filling the gap generated by removing this part of the dummy gate. Trench to form a series of steps such as gate. In this series of steps, the removal of the corresponding part of the dummy gate is an extremely critical step. Usually, dry etching is used to remove the gate electrode layer on the dummy gate, but the dry etching in this step will often cause unnecessary damage to the device, especially the surface of the interlayer dielectric layer will be recessed, This affects the performance of the fabricated d...

AI Technical Summary

Problems solved by technology

Usually, dry etching is used to remove the gate electrode layer on the dummy gate, but the dry etching in this step will often cause unnecessary damage to the device, especially the surface of the interlayer dielectric layer will be recessed, thereby affecting the performance of the fabricated device

[0003] However, there is currently no way to overcome the above problems in the process of manufacturing semiconductor devices using dummy gates.

Images