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Substrate and method for preparing the fracture of a substrate for at least a power semiconductor device

A technology of power semiconductors and substrates, applied in semiconductor/solid-state device manufacturing, welding equipment, electrical components, etc., can solve problems such as unusable and no longer able to ensure electrical insulation, and achieve the effect of simple methods and methods

Active Publication Date: 2014-01-29
SEMIKRON ELECTRONICS GMBH & CO KG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The problem that arises when breaking the substrate is that undesired cracks often occur on the insulating material body at the fracture edges and especially in the corner regions, and therefore the substrate cannot be used because its electrical insulation can no longer be ensured

Method used

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  • Substrate and method for preparing the fracture of a substrate for at least a power semiconductor device
  • Substrate and method for preparing the fracture of a substrate for at least a power semiconductor device
  • Substrate and method for preparing the fracture of a substrate for at least a power semiconductor device

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Embodiment Construction

[0030] exist figure 1 A schematic top view of a substrate 1 according to the invention is shown in . exist figure 2 A schematic sectional view along the desired breaking edge A of the first embodiment of the substrate 1 according to the invention is shown in . Within the framework of the described exemplary embodiment, the substrate 1 is designed as a DCB substrate, but it can also be designed as another substrate type.

[0031] Within the scope of the present exemplary embodiment, the substrate 1 has a non-conductive insulating material body 2 and an electrically conductive structured conductor layer 16 arranged on the insulating material body 2 , which forms the electrical conductor tracks 3 due to its structure. The substrate 1 preferably has a further electrically conductive conductor layer, wherein the insulating material body 2 is arranged between the structured conductor layer 16 and the further conductor layer. In the finished power semiconductor module, a cooling ...

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PUM

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Abstract

The invention relates to a method for breaking preparing a substrate (1) for at least one power semiconductor component having the following method steps: a) providing the substrate (1), wherein the substrate (1) having an electrically non-conductive insulating material (2), b) removal of material on the insulating material (2) along a desired break lines (A, B, C, D, E) of the substrate (1), wherein the material removal is carried out such that in corner regions (14) on which at least two desired (A, B, C, D, E) break lines meet, a compared to the material removal which, in the remaining regions (17) of the desired break lines (A, B, C, D, E) is carried out, higher material removal is carried out. The invention further relates to a respective substrate (1).The invention enables the reduction of unexpected outbreaks on insulating (2) the breaking of a substrate (1) for at least one power semiconductor component.

Description

technical field [0001] The invention relates to a method for fracturing a substrate for preparing at least one power semiconductor component. Furthermore, the invention also relates to a substrate related thereto. Background technique [0002] In power semiconductor modules known from the prior art, power semiconductor components such as power semiconductor switches and diodes are usually arranged on a substrate and electrically conductively connected to one another by means of conductor layers of the substrate, wire bonds and / or composite foils. Power semiconductor switches are usually in the form of transistors, such as IGBTs (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) or MOSFETs (Metal Oxide Semiconductor Field Effect Transistor, Metal Oxide Semiconductor Field Effect Transistor), or in the form of thyristors form exists. [0003] The power semiconductor components arranged on the substrate are often electrically connected to one or more so-ca...

Claims

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Application Information

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IPC IPC(8): H01L21/301H01L21/78
CPCH01L21/78B23K26/385B23K26/365B23K26/0042B23K26/409B23K26/4075B28D5/0011B23K26/0087B23K26/0009B23K26/0006B23K26/359B23K26/361B23K26/389B23K26/40B23K2103/172B23K2103/50B23K2103/56
Inventor 诺贝特·克劳斯格奥尔格·泰斯
Owner SEMIKRON ELECTRONICS GMBH & CO KG
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