Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Triplication redundancy-based anti-radiation self-refreshing register

A three-mode redundancy and register technology, applied in static memory, instruments, etc., can solve problems such as circuit failure, avoid error accumulation and improve work efficiency.

Active Publication Date: 2014-02-12
WUXI I-MENG ELECTRONIC TECH CO LTD
View PDF6 Cites 21 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional TMR hardening method is to copy a register into three copies, and adopt a voting method of choosing two out of three. Any one of the registers is bombarded by heavy particles and flipped, and the circuit works normally when the output of the other two registers is normal; The other two registers in the environment also have the possibility of flipping under the bombardment of heavy particles, resulting in circuit failure

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Triplication redundancy-based anti-radiation self-refreshing register
  • Triplication redundancy-based anti-radiation self-refreshing register
  • Triplication redundancy-based anti-radiation self-refreshing register

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] In order to make the technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and examples of implementation. The specific implementation cases described here are only used to illustrate the present invention, and are not intended to limit the present invention.

[0014] figure 1 It shows the commonly used register structure. The circuit structure is divided into front and back two-stage latch circuits. The previous stage latch circuit, when C is low, the circuit is turned on, and the data D enters the latch state. At this time, the latter stage circuit is closed. ; In the latter stage of the latch circuit, when C is at a high level, the circuit is turned on, and the data D enters the latch state of the latter stage from the previous stage and is output from the Q terminal. At this time, the previous stage circuit is closed. In a certain period of t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a triplication redundancy-based anti-radiation self-refreshing register. In two stages of latch structures of the register, a voter is added to the second-stage latch structure; an output end connected with the register is arranged at the input end of the voter; data of other two input ends are from other two outputs of the self-refreshing register with a triplication redundancy structure. During operation, when one of three data output paths is impacted by single particles to be turned, the rest two paths immediately correct a storage value for the register with a wrong storage value, so that the problem of turnover of two registers caused by radiation accumulation when the registers work in an irradiation environment for a long term is avoided.

Description

technical field [0001] The invention relates to a radiation-resistant self-refresh register based on triple-mode redundancy, which is used to form a triple-mode redundant structure and belongs to the field of integrated circuit design. Background technique [0002] As a spacecraft travels in space, it is constantly exposed to a radiation environment of charged particles. High-energy protons and neutrons in the space radiation environment can cause single event effects in semiconductor devices in electronic systems. Single-Event Effect (SEU) is one of the most serious radiation effects on integrated circuits. Single event flipping will cause various soft errors and seriously affect the reliability of aerospace electronic systems. [0003] In many chips, initial configuration words need to be stored in registers for a long time. Triple Module Redundant (TMR) is an effective method for hardening SEU. The traditional TMR hardening method is to copy a register into three copie...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/44
Inventor 陈钟鹏万书芹施斌友张涛封晴
Owner WUXI I-MENG ELECTRONIC TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products