The invention discloses an electro-absorption modulated
laser chip and a manufacturing method thereof, and relates to the technical field of
semiconductor devices.The
chip comprises a substrate, a modulator layer, a passive
waveguide layer, a
laser layer, an
amplifier layer, a wrapping layer and a
contact layer, the passive
waveguide layer is arranged in a spacer region between the
laser layer and the modulator layer in a butt-joint growth mode, the
amplifier region is arranged on the other side of the modulator layer, the laser layer is arranged in the laser region on one side of the passive
waveguide layer in the spacer region in a butt-joint growth mode, and the
amplifier layer is arranged above the passive waveguide layer in the amplifier region. The cladding layer and the
contact layer are sequentially arranged above the functional layer, a
mask is used for covering a specific area in the butt-joint growth process, and the
mask is removed after growth; according to the technical scheme, the active
gain material of the amplifier region can be manufactured on the passive waveguide material while the manufacturing steps are simplified, the optical
signal loss is reduced, and the
chip saturated light output power is improved.