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LED element, manufacturing method thereof, and flip chip LED element

A technology for light-emitting diodes and a manufacturing method, which is applied to electrical components, semiconductor devices, circuits, etc., can solve problems such as inability to achieve anti-reflection effects, and achieve the effect of improving light extraction efficiency and high light extraction efficiency.

Inactive Publication Date: 2014-02-12
GENESIS PHOTONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although such a structure can increase the diffusion effect of light, it still cannot achieve a good anti-reflection effect.

Method used

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  • LED element, manufacturing method thereof, and flip chip LED element
  • LED element, manufacturing method thereof, and flip chip LED element
  • LED element, manufacturing method thereof, and flip chip LED element

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Experimental program
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Embodiment Construction

[0042] Figure 1A It is a schematic cross-sectional view of a light emitting diode device according to an embodiment of the present invention. Please refer to Figure 1A The light emitting diode element 100 of this embodiment includes a substrate 110, an undoped semiconductor layer 190, a first type doped semiconductor layer 120, a second type doped semiconductor layer 130, a light emitting layer 140, a first electrode 150, and a second electrode. 160. In this embodiment, the substrate 110 may be a sapphire substrate, but the present invention is not limited to the above.

[0043] The substrate 110 of this embodiment has two opposite surfaces 110a and 110b. The undoped semiconductor layer 190 of this embodiment is disposed on the surface 110 a of the substrate 110. The first type doped semiconductor layer 120 is disposed on the undoped semiconductor layer 190. The second type doped semiconductor layer 130 of this embodiment is disposed on the first type doped semiconductor lay...

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PUM

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Abstract

The invention provides an LED element, a manufacturing method thereof, and a flip chip LED element. The method comprises the steps that a substrate is provided, the substrate is provided with a first surface and a second surface which are opposite, an undoped semiconductor layer is formed on the first surface of the substrate, a first type doped semiconductor layer is formed on the undoped semiconductor layer, a light-emitting layer is formed on the first type doped semiconductor layer, a second type doped semiconductor layer is formed on the light-emitting layer, a first electrode and a second electrode are formed on the first type doped semiconductor layer and the second type doped semiconductor layer respectively, the second surface of the substrate is patterned to form a plurality of optical micro structures, and a plurality of gaps are formed between the optical micro structures. In addition, the invention further provides the LED element and the flip chip LED element.

Description

Technical field [0001] The present invention relates to a photoelectric device and a manufacturing method thereof, and more particularly to a light emitting diode device, a manufacturing method thereof, and a flip-chip light emitting diode device. Background technique [0002] Since Thomas Edison invented the incandescent lamp, electricity has been widely used in the world for lighting. So far, high-brightness and durable lighting devices, such as fluorescent lamps, have been developed. Compared with incandescent bulbs, fluorescent lamps have the advantages of high efficiency and low operating temperature. However, fluorescent lamps contain heavy metals (mercury), which tend to cause damage to the environment when they are discarded. With the development of lighting technology, a more energy-saving and environmentally friendly light source, namely light emitting diodes, has been developed. Light-emitting diodes emit light by recombining electrons and holes in the P-N junction. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/20H01L33/00
CPCH01L33/20H01L33/005
Inventor 陈正言蔡胜杰
Owner GENESIS PHOTONICS