Czochralski single crystal furnace magnetic field device and crystal pulling method using the magnetic field device

Abstract

The invention discloses a Czochralski crystal growing furnace magnetic field device for applying a magnetic field for a melt in a crucible. The Czochralski crystal growing furnace magnetic field device comprises a first coil and a second coil which are vertically arranged around the crucible, wherein the first coil and the second coil are coaxial with the crucible. A magnetic field formed by the first coil and the second coil is provided with a sunken interface. The magnetic field strength of a region above the interface is zero. The interface is provided with a first side edge and a second side edge which are opposite. The first side edge and the second side edge both extend towards the direction far away from the crucible along an extension line of the side wall of the crucible. The Czochralski crystal growing furnace magnetic field device disclosed by the invention is low in cost, capable of generating a changed magnetic field and particularly a special-shaped magnetic field with high strength inside the melt and zero strength above the interface, capable of effectively inhibiting the heat convection of the melt and beneficial to the stable growth of a single crystal and the acquisition of a high-quality single crystal. The invention also provides a method for pulling a crystal by using the Czochralski crystal growing furnace magnetic field device.

Description

technical field [0001] The invention belongs to the technical field of single crystal manufacturing, relates to a magnetic field device for a Czochralski single crystal furnace, and also relates to a crystal pulling method using the magnetic field device for a Czochralski single crystal furnace. Background technique [0002] With the continuous development of the world economy, the demand for high-efficiency energy in modernization is increasing. Photovoltaic power generation, as one of the main energy sources for green energy and sustainable development of human beings, has been increasingly valued and developed vigorously by countries all over the world. As one of the basic materials for photovoltaic power generation, monocrystalline silicon wafers have a wide market demand. A common silicon single crystal growth method is the Czochralski method, that is, in a single crystal furnace, the seed crystal is immersed in a melt contained in a quartz crucible to pull the seed cr...

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Problems solved by technology

[0004] The object of the present invention is to provide a Czochralski single crystal furnace magnetic field device and a crystal pulling method using the Czochralski single crystal furnace magnetic field device to solve the problem that the heat convection of the melt cannot be completely suppressed in the existing Czochralski single crystal process problems to improve single crystal quality

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