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Memory structure replacing dual-port static memory

A technology of static memory and memory, which is applied in the field of memory to achieve the effect of area improvement and chip cost reduction

Active Publication Date: 2014-02-19
SHANGHAI HUAHONG INTEGRATED CIRCUIT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the area of ​​a dual-port static memory is about 50% larger than that of a single-port static memory with the same storage capacity, so it does not have an advantage in chip area and chip cost

Method used

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  • Memory structure replacing dual-port static memory

Examples

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Embodiment Construction

[0014] see figure 1 As shown, assuming that the capacity of the original dual-port static memory is 8K bytes, in the following embodiment, 16 single-port static memories of 512 bytes are used to replace the dual-port static memory.

[0015] There are multiple single-port static memories, and each single-port static memory has independent clock and bus signals and independent empty and full status flags (ie figure 1 empty full flag). The clock and bus signals of each single-port static memory come from the two access terminals (ie, the first access terminal and the second access terminal) of the original dual-port memory, and the clock and bus signals of the two access terminals are respectively input to a selection circuit , the output of the selection circuit is connected to a single-port static memory. The control signal of the selection circuit includes a data flow direction signal and an output signal of an empty and full state flag bit of the single-port static memory. ...

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Abstract

The invention discloses a memory structure replacing a dual-port static memory. The memory structure comprises a plurality of one-port static memories and a plurality of selection circuits. Each of the one-port static memories is provided with an independent clock, a bus signal, and independent empty-full state flag bits. Each of the selection circuits is provided with two access ports. The clocks and the bus signals are respectively inputted into the access ports. Output ports of the selection circuits are connected to the one-port static memories. Control signals of the selection circuits comprise data stream directional signals, and outputting signals of the empty-full state flag bits of the one-port static memories. The selection circuits under the control of the control signals are used for switchover of the clocks and the bus signals of the one-port static memories. According to the data stream direction and empty-full states of the one-port static memories, the clocks of the one-port static memories are switched to the working clock of a corresponding access ports. The memory structure can reduce the chip area and the chip cost.

Description

technical field [0001] The invention relates to the field of memory, in particular to a memory structure replacing a dual-port static memory. Background technique [0002] With the development of semiconductor and electronic technology, there are more and more functions to be completed on a single chip, which makes the design of the chip circuit more and more complicated. There are multiple clock domains on the chip, and cross-clock domain design has become a norm. A large amount of data is transmitted between different clock domains, how to deal with these bulk data across clock domains has also become a key issue. [0003] The current common practice is to use a dual-port static memory as an intermediate memory for data transmission across clock domains. The dual-port static memory can work in two clock domains, thereby realizing data conversion in different clock domains. [0004] However, the area of ​​the dual-port static memory is about 50% larger than that of the sin...

Claims

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Application Information

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IPC IPC(8): G11C11/413
Inventor 叶国平
Owner SHANGHAI HUAHONG INTEGRATED CIRCUIT
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