Spin torque transfer memory cell structure and method

Abstract

The invention discloses the structure and method of spin torque transfer STT memory unit. One or more STT memory cell structures comprising: a ring-shaped STT stack comprising a non-magnetic material between a first ferromagnetic material and a second ferromagnetic material; and surrounding the ring-shaped STT stack At least a portion of the soft magnetic material.

Description

technical field [0001] The present invention relates generally to semiconductor memory devices and methods, and more particularly, to spin torque transfer (STT) memory cell structures and methods. Background technique [0002] Memory devices are typically provided as internal semiconductor integrated circuits in computers or other electronic devices. There are many different types of memory, including random access memory (RAM), read only memory (ROM), dynamic random access memory (DRAM), synchronous dynamic random access memory (SDRAM), flash memory, resistor variable memory (such as phase change random access memory (PCRAM) and resistive random access memory (RRAM)) and magnetic random access memory (MRAM) such as spin torque transfer random access memory (STT RAM), among others. [0003] MRAM devices can employ magnetic tunnel junctions (MTJs) that can be viewed as multi-state resistors due to different relative orientations (e.g., parallel and antiparallel) of magnetic ...

AI Technical Summary

Problems solved by technology

For example, smaller width lines may require more current to generate the required switching fields, which increases power dissipation

Images