Unlock instant, AI-driven research and patent intelligence for your innovation.

Time delay unit circuit and address signal change detection circuit

A technology of delay unit and address signal, applied in the field of memory, can solve the problem of not being a certain value, affecting the stability of pulse signal, etc., and achieve the effect of pulse signal stability

Active Publication Date: 2014-03-26
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The delay time changes with the change of the power supply voltage, not a definite value, which in turn affects the stability of the pulse signal generated by the address signal change detection circuit

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Time delay unit circuit and address signal change detection circuit
  • Time delay unit circuit and address signal change detection circuit
  • Time delay unit circuit and address signal change detection circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] As described in the background, the pulse signal of the existing address signal change detection circuit is controlled by the delay unit circuit, and the pulse signal is unstable. The inventor found that one of the main reasons for this defect is that the delay time of the delay unit circuit is affected by the change of the power supply voltage and is not a definite value, so the pulse signal is unstable with the change of the power supply voltage.

[0038] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed below.

[0039] Secondly, the present invention is described in detail in combination with schematic diag...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention discloses a time delay unit circuit and an address signal change detection circuit, wherein a resistor is added between a capacitor and a latch in the time delay unit circuit so as to make the capacitor and the resistor form a RC circuit, the capacitor charge-discharge time t in the RC circuit is k*R*C and is independent of a power supply voltage, and the delay time of the time delay unit circuit is independent of the power supply voltage and is related to the resistance value and the capacitance value in the RC circuit of the time delay unit circuit, such that the time delay unit circuit is not affected by the change of the power supply voltage, and is related to the resistance value and the capacitance value so as to make the pulse signal produced by the address signal change detection circuit be stable.

Description

technical field [0001] The invention relates to the technical field of memory, and more specifically, to a delay unit circuit and an address signal change detection circuit. Background technique [0002] For asynchronous memory, since there is no clock signal, a dedicated circuit is required to control the timing of the entire chip. ATD (Address Transition Detection, address signal change detection) circuit senses the change of address signal and chip enable signal, and converts this change information into an appropriate read operation pulse signal, which is equivalent to a virtual clock signal to control the entire chip. read operation. [0003] Such as figure 1 Shown is a circuit structure diagram of a delay unit circuit in the existing address signal change detection circuit. Among them, P1 and P2 are PMOS tubes, C1 and C2 are capacitors, INV1, INV2 and INV3 are inverters, NAND is a NAND gate, A is an address signal, It is the inverse signal of address signal A, A, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C8/18
Inventor 陈巍巍陈岚龙爽杨诗洋陈丽
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI