Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ribbon injection klystron external tuning device

A technology of external tuning and strip injection, which is applied in the direction of discharge tubes, time-of-flight electron tubes, circuit components of time-of-flight electron tubes, etc., can solve the problems of difficult spring development and expensive development of small-sized bellows, and achieve The effect of light weight, light mass and small size

Inactive Publication Date: 2017-07-28
INST OF ELECTRONICS CHINESE ACAD OF SCI
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] With the development of microwave vacuum electronic devices towards high frequency and miniaturization, the size of bellows is required to be smaller and smaller. However, the development of small-sized bellows is expensive and difficult, and it is difficult to develop springs that meet the requirements.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ribbon injection klystron external tuning device
  • Ribbon injection klystron external tuning device
  • Ribbon injection klystron external tuning device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings. It should be noted that, in the drawings or descriptions of the specification, similar or identical parts all use the same figure numbers. Implementations not shown or described in the accompanying drawings are forms known to those of ordinary skill in the art. Additionally, while illustrations of parameters including particular values ​​may be provided herein, it should be understood that the parameters need not be exactly equal to the corresponding values, but rather may approximate the corresponding values ​​within acceptable error margins or design constraints. The directional terms mentioned in the embodiments, such as "upper", "lower", "front", "rear", "left", "right", etc., are only referring to the directions of the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an external tuning device for a strip-shaped injection klystron. The strip-shaped klystron external tuning device includes: accommodating cavity, tuning assembly, trapezoidal lever frame and control assembly, which adopts inductive tuning method, and the tuning piston is inserted into the strip-shaped klystron body to form a part of the resonance cavity. Cavity wall; the movement of the tuning piston is controlled by the lever principle, which changes the volume and distributed inductance of the resonant cavity, thereby changing the resonant frequency of the resonant cavity. The invention does not use a bellows, but uses a deformable sealing diaphragm to realize the tuning of the resonant cavity, thereby reducing the cost and simplifying the structure.

Description

technical field [0001] The invention relates to the technical field of microwave vacuum electronic devices, in particular to an external tuning device for a strip-shaped injection klystron. Background technique [0002] In the klystron, the structure and size of the resonant cavity determine its resonant frequency and quality factor, which in turn determines the working characteristics of the klystron. During the tube-making process of the klystron, the size of the resonant cavity deviates from the design value, which leads to the change of the frequency characteristics of the resonant cavity. The klystron resonant cavity tuning technology makes up for the dimensional error caused by the tube making process to a certain extent. [0003] The tuning technology of the resonant cavity is divided into three types: capacitance tuning, inductance tuning and compound tuning. Inductance tuning is to change the volume of the resonant cavity and the distributed inductance of the reso...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01J23/20H01J23/207
Inventor 杨修东王树忠阮存军赵鼎张长青
Owner INST OF ELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products