An ion implanter wide beam uniformity adjustment device

Abstract

The invention discloses a broad beam uniformity adjusting device of an ion implanter. The broad beam uniformity adjusting device aims to solve the problem that the broad beam uniformity is difficult to control. The broad beam uniformity adjusting device comprises a multi-filament ion source, a multi-slit extraction electrode plate, a vertical mass analyzer, an analysis diaphragm, a beam blocking diaphragm, a substrate and a fixed Faraday array; plasmas are extracted and fed into the vertical mass analyzer by the multi-slit extraction electrode plate and are fed into the analysis diaphragm after being sorted by the vertical mass analyzer, the analysis diaphragm is provided with a plurality of analysis slits, the beam blocking diaphragm is arranged at an outlet of the analysis diaphragm, and broad ion beams are completely fed into a Faraday body of the fixed Faraday array by the aid of the fixed Faraday array; the substrate which horizontally reciprocates is positioned between the beam blocking diaphragm and the fixed Faraday array. The broad beam uniformity adjusting device has the advantages that light paths are simple in structure, broad beam uniformity adjustment operation is simple and convenient, and the broad beam uniformity adjusting device is high in reliability and can be used on low-temperature polycrystalline OLED (organic light emitting diode) device production lines.

Description

technical field

[0001] The invention relates to an ion implanter wide-beam uniformity adjustment device, in particular to a wide-beam uniformity adjustment device in an ion implanter for manufacturing low-temperature polysilicon OLED (organic light-emitting diode) devices. Background technique

[0002] In the existing high-generation low-temperature polysilicon OLED (organic light-emitting diode) device manufacturing technology, ion implantation technology is used to realize channel implantation in the process, LDD (light drain doped) ion implantation and source / drain implantation, in order to meet low temperature The high precision of the driving circuit of polysilicon, the stability and uniformity of ion implantation become the important key to the success or failure of the device. In order to achieve high uniformity, high standard requirements are put forward for ion implanters, especially beam uniformity, which has become an important indicator for considering ion implan...

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