Production method for semiconductor device

Abstract

The invention provides a production method for a semiconductor device, and relates to the technical field of semiconductors. The method comprises the following steps: S101: forming graphs of core material layers on a semiconductor substrate with a to-be-graphed film; step S102: processing the core material layers so as to enable different surfaces of the core material layers to have different matter deposition rate; step S103: forming material films of spacer layers on the semiconductor substrate; step S104: etching the material films of the spacer layers so as to form graphs of the spacer layers; step S105: removing the core material layers; step S106: performing patterning on the to-be-graphed film; step S107: removing the spacer layers. The method improves the double patterning, omits the cutting and etching technology after the spacer layers are formed in the traditional double patterning technology, simplifies the technology, reduces the cost, and ensures the product yield.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a semiconductor device. Background technique [0002] With the development of semiconductor manufacturing technology to the 22nm node and below, double patterning has become a very promising method to achieve more precise patterns at increasingly smaller critical dimensions (CD). [0003] The traditional double patterning technology requires cutting and etching process (cutting photo) after the spacer is formed, which complicates the process method and challenges the alignment accuracy. [0004] Below, combine Figure 1A to Figure 1F , to illustrate the traditional method of manufacturing semiconductor devices using double patterning technology. in, Figure 1A -1, Figure 1B -1, Figure 1C -1, Figure 1D -1, Figure 1E -1 and Figure 1F -1 is the front view of the pattern formed after each process is completed; Figure 1A -2, Figure 1B ...

AI Technical Summary

Problems solved by technology

[0016] In the above-mentioned semiconductor device manufacturing method using double patterning technology, step 4 requires cutting and etching process (cutting photo) for the spacer, which not only leads to the complexity of the process method, but also affects the alignment accuracy. raised a challenge

The complexity of the process will increase the manufacturing cost of semiconductor devices; and if the alignment accuracy is not enough, it will easily lead to a decline in product yield

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