A method of manufacturing a semiconductor device

Abstract

The invention provides a manufacturing method of a semiconductor device and relates to the field of semiconductor technology. The method includes the following steps: Step S101: Form a pattern of the core material layer on the semiconductor substrate on which the film to be patterned is formed; Step S102: Process the core material layer so that different surfaces of the core material layer have different substance deposition rates; Step S103: Form a spacer material film on the semiconductor substrate; Step S104: Etch the spacer material film to form a pattern of the spacer layer; Step S105: Remove the core material layer; Step S106: Treat the to-be- The patterned film is patterned; step S107: remove the spacer layer. This method improves the dual patterning technology and omits the cutting and etching process after the spacer layer is formed in the traditional dual patterning technology, thereby ensuring the product yield while streamlining the process and reducing costs.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a semiconductor device. Background technique [0002] With the development of semiconductor manufacturing technology to the 22nm node and below, double patterning has become a very promising method to achieve more precise patterns at increasingly smaller critical dimensions (CD). [0003] The traditional double patterning technology requires a cutting and etching process (cutting photo) after the spacer is formed, which complicates the process method and poses challenges to the alignment accuracy. [0004] Below, combine Figure 1A to Figure 1F , to illustrate the traditional method of manufacturing semiconductor devices using double patterning technology. in, Figure 1A -1, Figure 1B -1, Figure 1C -1, Figure 1D -1, Figure 1E -1 and Figure 1F -1 is the front view of the pattern formed after each process is completed; Figure 1A -2, ...

AI Technical Summary

Problems solved by technology

[0016] In the above-mentioned semiconductor device manufacturing method using double patterning technology, step 4 requires cutting and etching process (cutting photo) for the spacer, which not only leads to the complexity of the process method, but also affects the alignment accuracy. raised a challenge

The complexity of the process will increase the manufacturing cost of semiconductor devices; and if the alignment accuracy is not enough, it will easily lead to a decline in product yield

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