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Memory cells and methods of storing information

A memory unit and a technology for storing information, applied in read-only memory, static memory, information storage, etc., can solve problems such as memory unit failure and memory unit performance characteristics degradation

Active Publication Date: 2014-04-02
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, components used in a memory cell can degrade over time, which can lead to degraded performance characteristics of the memory cell and ultimately cause the memory cell to fail

Method used

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  • Memory cells and methods of storing information
  • Memory cells and methods of storing information
  • Memory cells and methods of storing information

Examples

Experimental program
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Embodiment Construction

[0010] Some embodiments include new memory cells that use indium gallium zinc oxide as the charge trapping material. Indium Gallium Zinc Oxide may be referred to as IGZO or GIZO. The order of the letters G, I, Z, and O does not imply the relative amounts of the atomic constituents represented by such letters; and thus the terms IGZO and GIZO are completely synonymous with each other.

[0011] The IGZO used in the embodiments described herein can comprise any suitable stoichiometric ratio. For example, in some embodiments IGZO may be considered to include Ga 2 o 3 : In 2 o 3 : a ratio of ZnO; and this ratio may be any suitable ratio including, for example, 1:1:1, 2:2:1, 3:2:1, 4:2:1, and the like.

[0012] figure 1 An example memory cell 10 is shown in . The memory cell includes a channel support material 12 and a stack 14 above the channel support material. Stack 14 includes dielectric material 16 , carrier trapping material 18 and conductive electrode material 20 . I...

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PUM

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Abstract

Some embodiments include memory cells which have channel-supporting material, dielectric material over the channel-supporting material, carrier-trapping material over the dielectric material and an electrically conductive electrode material over and directly against the carrier-trapping material; wherein the carrier-trapping material includes gallium, indium, zinc and oxygen. Some embodiments include methods of storing information. A memory cell to is provided which has a channel-supporting material, a dielectric material over the channel-supporting material, a carrier-trapping material over the dielectric material, and an electrically conductive electrode material over and directly against the carrier-trapping material; wherein the carrier-trapping material includes gallium, indium, zinc and oxygen. It is determined if carriers are trapped in the carrier-trapping material to thereby ascertain a memory state of the memory cell.

Description

technical field [0001] The invention relates to a memory unit and a method of storing information Background technique [0002] Memory is a type of integrated circuit and is used in computer systems to store data (ie, information). Integrated memories are typically fabricated in one or more arrays of individual memory cells. Memory cells can be volatile, semi-volatile, or non-volatile. Non-volatile memory cells can store data for long periods of time, and in some instances can store data in the absence of power. Volatile memory dissipates and therefore needs to be refreshed / rewritten to maintain data storage. [0003] The memory cells are configured to maintain or store memory in at least two different selectable states. In a binary system, the states are considered "0" or "1". In other systems, at least some individual memory cells may be configured to store information at more than two energy levels or states. [0004] There is a continuing goal of developing improve...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/115H01L21/8247H10B69/00
CPCG11C16/3418H01L21/28273H01L29/792G11C16/0416G11C16/06H01L29/788H01L29/40114H10B51/30
Inventor 古尔特杰·S·桑胡D·V·尼马尔·拉马斯瓦米
Owner MICRON TECH INC