How the transistor is formed

Abstract

The invention relates to a forming method of a transistor. The forming method comprises the following steps that: a semiconductor substrate is provided, wherein the semiconductor substrate has a gate structure; openings are formed in the portions, at the two sides of the gate structure, of the semiconductor substrate; doping material layers are formed at the bottom surfaces and parts of side wall surfaces, approaching the bottoms, of the openings and parts of side wall surfaces of the openings are exposed by the doping material layers, wherein the parts of side wall surfaces approach the semiconductor substrate surface and doped ions are contained in the doping material layers; thermal annealing is carried out on the doping material layers and thus the doped ions in the doping material layers are diffused into the semiconductor substrate from the bottoms of the openings and the parts of side wall surfaces approaching the bottoms, and doping layers are formed at the surfaces of the semiconductor substrate covered by the doping material layers in the openings; after the thermal annealing process, the rest of doping material layers is removed; and after the removing of the rest of doping material layers, stress layers are formed in the openings. The formed transistor has the good performance.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a transistor. Background technique [0002] As the most basic semiconductor device, transistors are currently being widely used. With the increase of component density and integration of semiconductor devices, the gate size of transistors has become shorter than before; however, the shortened gate size of transistors will make transistors The short channel effect is generated, and then leakage current is generated, which finally affects the electrical performance of the semiconductor device. At present, in the prior art, the stress of the channel region of the transistor is mainly increased to increase the mobility of carriers, thereby increasing the driving current of the transistor and reducing the leakage current in the transistor. [0003] In the prior art, the method for increasing the stress of the channel region of the transistor i...

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Problems solved by technology

[0008] However, the leakage current of the transistor with the stress layer formed in the prior art is relatively obvious, and the performance of the transistor is poor.

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