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Light emitting diode chip

A light-emitting diode and chip technology, which is applied to semiconductor devices, electrical components, circuits, etc., can solve problems such as uneven current distribution, rising voltage limit of light-emitting diode chips, and insufficient current.

Inactive Publication Date: 2014-04-09
LEXTAR ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if such an electrode arrangement is used for a large-sized LED chip, it is easy to cause insufficient current in areas other than the diagonal, resulting in uneven current distribution, which in turn causes problems such as heat concentration and uneven light-emitting areas.
In addition, the uneven current distribution will also cause the voltage limit (also known as forward voltage Vf) of the LED chip to rise, resulting in the need for a larger voltage to drive the LED chip to emit light, and reduce the energy conversion efficiency.

Method used

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Effect test

no. 1 approach

[0058] figure 1 A top view of the LED chip according to the first embodiment of the present invention is shown. figure 2 draw figure 1 The cross-sectional view of the light-emitting diode chip along the line A-A'. Such as figure 1 and figure 2As shown, the LED chip of this embodiment may include a substrate 10 , an N-type semiconductor layer 20 , a light-emitting layer 30 , a P-type semiconductor layer 40 , an N-type electrode layer 50 and a P-type electrode layer 60 . The N-type semiconductor layer 20 is disposed on the substrate 10 . The light emitting layer 30 is disposed on the N-type semiconductor layer 20 . The P-type semiconductor layer 40 is disposed on the light emitting layer 30 . The N-type electrode layer 50 is disposed on the N-type semiconductor layer 20 . The P-type electrode layer 60 is disposed on the P-type semiconductor layer 40 , and the P-type electrode layer 60 includes a plurality of closed loop patterns 600 , and these closed loop patterns 600 ...

no. 2 approach

[0066] image 3 A top view according to the second embodiment of the present invention is shown. Figure 4 draw image 3 The cross-sectional view of the light-emitting diode chip along the line B-B'. Such as image 3 and Figure 4 As shown, the main difference between this embodiment and the first embodiment is that: the N-type electrode layer 51 of this embodiment may further include an electrode connection pattern 516 connected between the two N-type electrode patterns 510 .

[0067] Specifically, the N-type electrode pattern 510 has an N-type bonding area 512 at its end, and the electrode connection pattern 516 is connected between the two N-type bonding areas 512 . Each N-type electrode pattern 510 has strip-shaped electrode patterns 514 parallel to each other, and the electrode connection pattern 516 and the N-type electrode patterns 510 connected to both ends thereof can be combined together to form a U shape. In other words, the length direction of the electrode co...

no. 3 approach

[0074] Figure 5 A top view of a light emitting diode chip according to a third embodiment of the present invention is shown. Figure 6 draw Figure 5 The cross-sectional view of the light-emitting diode chip along the line C-C'. Such as Figure 5 and Figure 6 As shown, the main difference between the present embodiment and the second embodiment is that the number of closed loop patterns 620 in the present embodiment is three, and they are adjacent to each other in a row. In addition, the N-type wiring region 522 is located in the upper and lower closed loop patterns 620 , and in the middle closed loop pattern 620 , an N-type extension electrode 528 can be further extended from the electrode connection pattern 526 .

[0075] It should be understood that in this embodiment, the closed loop patterns 620 are shown as three, but in fact, the P-type electrode layer 62 may also include more than three closed loop patterns 620 (for example: four, five, Six...or N closed loop pa...

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Abstract

A Light emitting diode (LED) chip includes a substrate, an N-type semiconductor layer, a luminous layer, a P-type semiconductor layer, an N-type electrode layer and a P-type electrode layer. The N-type semiconductor layer is mounted on the substrate. The luminous layer is mounted on the N-type semiconductor layer. The P-type semiconductor layer is mounted on the luminous layer. The N-type electrode layer is mounted on the N-type semiconductor layer. The P-type electrode layer is mounted on the P-type semiconductor layer, and includes a plurality of enclosed circuit patterns. These enclosed circuit patterns respectively encompass different parts of the N-type electrode layer.

Description

technical field [0001] The present invention relates to a light emitting device, and in particular to a light emitting diode chip. Background technique [0002] Based on the trend of environmental protection and energy saving, light emitting diodes (Light Emitting Diodes, LEDs) with advantages such as low power consumption and high efficiency have gradually replaced traditional light sources with high power consumption such as tungsten filament bulbs. [0003] The current common LED chip is to set an epitaxial stack structure on a substrate, and the epitaxial stack structure is formed by stacking an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer sequentially. An N-type electrode is arranged above the N-type semiconductor layer, and a P-type electrode is arranged above the P-type semiconductor layer. When the N-type electrode and the P-type electrode are energized, the electron holes in the N-type semiconductor layer and the P-type semico...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/38
CPCH01L33/20H01L33/38
Inventor 蔡沛修
Owner LEXTAR ELECTRONICS CORP
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