Double-end applying method of asymmetric high-voltage MOS devices

Abstract

The invention provides a double-end applying method of asymmetric high-voltage MOS devices. The double-end applying method comprises the steps that (1) source ends of two asymmetric high-voltage MOS devices are connected with substrate ends of the asymmetric high-voltage MOS devices respectively; (2) the two asymmetric high-voltage MOS devices are connected with each other in series in a back-to-back mode. According to selected technologies without symmetric high-voltage MOS devices, design requirements can be met by using an existing device to conduct circuit and layout design, and cost is saved. Particularly, on some occasions needing high-reliability circuits, the situation that few device types provided by the high-reliability technologies do not meet the requirements will not limit the circuit design. Technology selection is not limited by whether the technologies provide the symmetric high-voltage MOS devices, and the technologies are selected more flexibly.

Description

technical field [0001] The invention belongs to the technical field of mixed-signal integrated circuits, and in particular relates to a double-terminal application method of an asymmetric high-voltage MOS device, which is mainly used to solve the demand problem of double-terminal withstand voltage of high-voltage analog switches and the like for high-voltage MOS devices. Background technique [0002] In the fields of data acquisition, industrial control, telemetry and remote sensing, and communication, analog switches are playing an increasingly important role. The on-resistance, linearity, isolation and other indicators of analog switches are important indicators pursued by many analog switches at present, and their development is becoming more and more mature. However, the development of analog switches in terms of high power supply voltage and high signal voltage is very slow, and there are even bottlenecks. This is because the high-voltage MOS devices provided by most p...

AI Technical Summary

Problems solved by technology

However, the development of analog switches in terms of high power supply voltage and high signal voltage is very slow, and there are even bottlenecks

This is because the high-voltage MOS devices provided by most processes are asymmetric high-voltage MOS devices, and asymmetric high-voltage MOS devices can only withstand high voltage on one side, which cannot meet the bidirectional application requirements of switching circuits for MOS switching tubes.

The limitation of the structure has become one of the bottlenecks of the high-voltage analog switch

Especially in some occasions that require high reliability, the process requirements are very high. If the selected process cannot provide a high-voltage MOS device with a symmetrical structure, the design of the high-voltage analog switch cannot be completed.

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