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Backend detecting method for diodes and audions

A detection method and triode technology, applied in the direction of single semiconductor device testing, etc., can solve problems such as inability to adapt to large-scale production, irregularities and systems, etc., and achieve the effects of good test consistency, increased normal rate, and good adaptability

Inactive Publication Date: 2014-04-30
CHENGDU ADVANCED POWER SEMICON +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this kind of detection is only sporadic detection, without rules and systems, and cannot be adapted to mass production at all.

Method used

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  • Backend detecting method for diodes and audions

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Embodiment Construction

[0026] The technical solution of the present invention will be further described in detail below in conjunction with the accompanying drawings, but the protection scope of the present invention is not limited to the following description.

[0027] Such as figure 1 As shown, the back-end detection method of diodes and triodes is mainly used for the packaging and testing of diodes and triodes to ensure the consistency of the test process. It includes a one-window test and a two-window test, wherein the one-window test includes the following steps :

[0028] S11: Send the product to be tested into a window test socket;

[0029] S12: The product to be tested is tested for potential hazards in a window test socket. Potential hazard tests include reverse breakdown test, high current gain test, large saturation current test and high current open test;

[0030] S13: The product to be tested is subjected to a non-hazardous test in a one-window test socket. The non-hazardous test incl...

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Abstract

The invention discloses a backend detecting method for diodes and audions. The method comprises the first window testing and the second window testing, wherein the first window testing comprises the potential risk testing, the no-risk testing and the key testing; the second window testing comprises the no-risk testing and the key testing; the key testing mainly comprises the testing of parameters including forward voltage, current magnification times, leak current, forward direct current and maximum circulation current. The method comprises the two testing steps, the accuracy of testing is improved, the number of testing parameters is large, the detection range is wide, and as the potential risk testing is arranged, the reverse breakdown, large saturation current, large current opening and large current gains of the diodes and the audions are tested, the normal rate of the diodes and the audions to work under the potential risk state is increased, the performance of the diodes and the audions is better after testing, and hidden defective diodes and audions are eliminated.

Description

technical field [0001] The invention relates to the field of packaging and testing of electronic products, in particular to a back-end detection method for diodes and triodes. Background technique [0002] The original detection of diodes and triodes only detects the relevant parameters of diodes and triodes, such as the forward voltage, forward DC current, and maximum flow current of diodes and triodes. These parameters are only used by diodes. The effect and detection are of little significance. If there are defective products after production, it is impossible to judge the qualified rate of diodes and triodes by using this set of related parameter detection methods. And if the product is released to the seller after only passing such a set of testing procedures, the failure rate of such products is very high. [0003] In order to improve the performance of existing diodes and triodes, it is necessary to conduct potential hazard detection, such as reverse breakdown detec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
Inventor 李莉刘宇胡波李智军邹显红刘俊樊增勇刘达
Owner CHENGDU ADVANCED POWER SEMICON
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