Novel HEMT for improving piezoelectric polarization intensity

A new type of polarization strength technology, applied in the field of microelectronics, can solve the problems of insufficient detection sensitivity of pressure sensors and insufficient piezoelectric polarization strength, and achieve high sensitivity

Inactive Publication Date: 2014-04-30
HANGZHOU DIANZI UNIV
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Problems solved by technology

The main reason is that the piezoelectric polarization between the AlGaN / GaN layers is not large enough, which leads to insufficient detection sensitivity of the pressure sensor

Method used

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  • Novel HEMT for improving piezoelectric polarization intensity
  • Novel HEMT for improving piezoelectric polarization intensity

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Embodiment Construction

[0018] Such as figure 1 , figure 2 Shown: A novel HEMT structure with enhanced piezoelectric polarization comprising: a sapphire substrate. GaN buffer layer, InGaN layer, GaN layer, AlN insertion layer, AlGaN layer, GaN cap layer:

[0019] Based on the AlGaN / AlN / GaN structure HEMT containing the AlN spacer layer, the present invention inserts an InGaN layer under the GaN layer to form an Al x Ga 1-x N / AlN / GaN / In y Ga 1-y HEMT with N structure, the cross-section is shown in figure 1 shown. Channels are formed between AlGaN and GaN, and between GaN and InGaN, and the 2DEG generated due to the polarization effect is in the channel. The InGaN layer is inserted, and the lattice constant of GaN in the GaN / InGaN structure is smaller than that of InN, so that the GaN lattice is strained, and the piezoelectric polarization generated by the strain is stronger than that between AlGaN / GaN, so that The polarization effect of the device is stronger under the same pressure, and the ...

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Abstract

The invention discloses a novel HEMT for improving the piezoelectric polarization intensity. An InGaN layer is inserted below a GaN layer to form the HEMT of an AlxGal-xN/AlN/GaN/InyGal-yN structure on the basis of an HEMT which comprises an AlN isolation layer and is of an AlGaN/AlN/GaN structure. Channels are formed between AlGaN and GaN and between GaN and InGaN respectively and contain 2DEG which is generated through the polarization effect. The InGaN layer is inserted, the lattice constant of GaN in the GaN/InGaN structure is smaller than that of InN, and therefore lattice strain happens to GaN, the intensity of piezoelectric polarization generated by strain is higher than the intensity of piezoelectric polarization between AlGaN and GaN, a device can have a better polarization effect under the same pressure, the density fluctuation of a two-dimensional electron gas face is larger, and sensitivity of the device is improved.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a novel HEMT which improves the piezoelectric polarization intensity. Background technique [0002] Sensor technology is an important symbol of the development level of modern science and technology, and pressure sensors are the most widely used category. Traditional pressure sensors are mainly mechanical structural devices. With the development of semiconductor technology and MEMS technology, people use silicon as the main material, adopt capacitance, piezoresistive and other forms, and develop silicon micro pressure sensors, which are characterized by small size, light weight, high accuracy and good temperature characteristics. . Today, the scope of application and research has expanded, and people have begun to pay attention to the development of micro pressure sensors that can directly work in harsh environments. With the in-depth research on wide-band...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L29/06H01L29/423H01L29/43H01L21/335
CPCH01L29/7782H01L29/1029H01L29/66462
Inventor 程知群栾雅连心想贾民仕
Owner HANGZHOU DIANZI UNIV
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