Unlock instant, AI-driven research and patent intelligence for your innovation.

Multichannel homogeneous pathways for enhanced mutual triggering of electrostatic discharge fingers

A technology of electrostatic discharge and electrostatic discharge protection, which is applied in the direction of circuits, electrical components, electric solid devices, etc.

Active Publication Date: 2016-11-30
MICROCHIP TECH INC
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Furthermore, the industry may subject devices to system-level tests as defined by IEC801 and IEC61000-4-2

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multichannel homogeneous pathways for enhanced mutual triggering of electrostatic discharge fingers
  • Multichannel homogeneous pathways for enhanced mutual triggering of electrostatic discharge fingers
  • Multichannel homogeneous pathways for enhanced mutual triggering of electrostatic discharge fingers

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0042] Bypassing high ESD energy in ESD protection devices requires wide devices, which can only be achieved with multiple base devices connected in parallel. Such base devices are referred to as "fingers" hereinafter. Maximum efficiency is achieved when all these fingers in parallel are triggered together. Only a few fingers, or even a single finger, are triggered under certain discharge conditions. Thus, the ESD protection efficiency is significantly reduced.

[0043] ESD protection mainly relies on paired bipolar devices inherent in MOS devices. A grounded gate N-type metal oxide semiconductor (NMOS) is generally used as an ESD device. Bipolar paired devices inherent to grounded gate NMOS devices are NPN devices. A grounded gate (GG) NMOS device is an NMOS device that has its gate connected to its source terminal, either directly or through a grounded gate resistor, and the source node is connected to ground. The drain node and the source node of the NMOS transistor ar...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Intertriggering of ESD fingers is improved by creating base contacts in each individual finger and connecting all of these base contacts in parallel. The local base contacts in each ESD finger are positioned at locations where the base voltage increases significantly as ESD current increases. Thus when an ESD finger is triggered, its local base voltage will tend to increase significantly. Since all of the ESD finger bases are connected in parallel, this local voltage increase will forward bias the die base emitter junctions of the other ESD fingers, thus triggering them all. By sharing the trigger current from the fastest ESD fingers with the slower ESD fingers it is ensured that all ESD fingers are triggered during an ESD event.

Description

[0001] Related Patent Applications [0002] This application asserts that the application filed on July 21, 2011 by Philippe Deval, Fernandez Marija and Besseux Patrick, entitled "Specifications for Electrostatic Discharge Priority of commonly owned U.S. Provisional Patent Application Serial No. 61 / 510,357 of "Multi-Channel Homogenous Path for Enhanced Mutual Triggering of Electrostatic Discharge Fingers"; for all purposes Said application is incorporated herein by reference. technical field [0003] The present invention relates to high voltage (HV) metal oxide semiconductor (MOS) devices, and more particularly, to providing enhanced electrostatic discharge (ESD) protection for HVMOS devices. Background technique [0004] CAN Controller Area Network (CAN or CAN-bus) is a vehicle bus standard designed to allow microcontrollers and devices to communicate with each other within a vehicle without a host computer. CAN is a message-based protocol designed specifically for auto...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02H01L29/10
Inventor 菲利普·德沃尔马丽亚·费尔南德斯帕特里克·贝萨厄泽
Owner MICROCHIP TECH INC