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Triple-junction solar cell and preparation method thereof

A solar cell and three-junction technology, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of triple-junction battery current mismatch, poor uniformity of quantum dots in the active area, and poor spectral response, so as to reduce carriers Recombination, high conversion efficiency, and improved minority carrier lifetime

Inactive Publication Date: 2013-02-13
TIANJIN SANAN OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the invention is to solve the current mismatch of the traditional three-junction battery, the poor spectral response of the InAs quantum dot structure inserted in the middle battery, and the poor uniformity of the quantum dots in the active area.

Method used

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  • Triple-junction solar cell and preparation method thereof

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Embodiment Construction

[0032] The present invention will be further described below in conjunction with the examples, but the protection scope of the present invention should not be limited thereby.

[0033] Such as figure 1 As shown, a triple-junction solar cell includes: Ge bottom cell 100, In 0.01 Ga 0.99 Cells in As and Ga 0.5 In 0.5 The P top cell 500 and each junction cell are connected through tunnel junctions 500 and 510 .

[0034] The Ge bottom cell 100 is formed by self-diffusion on a P-type Ge substrate. In MOCVD equipment, pre-pass PH 3 And growing the GaInP initial layer can make the P atoms diffuse into the Ge substrate to form an N-type Ge emission region, and the thickness of the emission region is about 0.1um.

[0035] GaInP 110 is grown on the Ge bottom cell 100 to overcome the lattice mismatch between the Ge substrate and the InGaAs material, and at the same time serve as a window layer for the Ge bottom cell.

[0036] grow In on the GaInP window layer 110 0.01 Ga 0.99 As...

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Abstract

The invention provides a quantum dot solar cell structure with an indium gallium arsenide (InGaAs) stress modulation layer structure and a preparation method of the quantum dot solar cell structure. By the invention, the dimension uniformity of each layer of quantum dots in a multilayer quantum dot structure is effectively controlled, so band gaps of all layers of quantum dots are basically the same, the conversion loss of photon-generated carriers between the quantum dots of different dimensions is reduced, the spectral response of the quantum dot structure is improved, the transition loss of the quantum dots is reduced, the short-circuit current of a triple-junction cell is improved, and the photoelectric conversion efficiency of a multi-junction solar cell is improved.

Description

technical field [0001] The invention relates to a high-efficiency multi-junction solar cell manufacturing technology, which belongs to the technical field of semiconductor materials. More specifically, the present invention relates to a group III-V multi-junction semiconductor solar cell with an epitaxially grown stacked quantum dot structure. Background technique [0002] The GaInP / InGaAs / Ge triple-junction solar cell is one of the most commonly used multi-junction solar cell structures because of the lattice matching of the epitaxial layer and the simple epitaxial growth. Since the three-junction cells are connected in series, the current is limited by the cell with the smallest current among the three-junction cells, which results in a current mismatch between each junction cell. 0.67eV, which will cause the bottom cell to absorb a lot of light, and the current is limited by the middle cell or the top cell. Therefore, the traditional GaInP / InGaAs / Ge triple-junction solar...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/078H01L31/0352H01L31/18
CPCY02E10/50Y02P70/50
Inventor 刘建庆林志东蔡文必林桂江丁杰毕京峰宋明辉
Owner TIANJIN SANAN OPTOELECTRONICS