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Photoelectric conversion element and manufacturing method thereof

A technology for photoelectric conversion elements and manufacturing methods, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, photovoltaic power generation, etc., can solve problems such as low photoelectric conversion efficiency, and achieve the effect of improving photoelectric conversion efficiency and carrier transmission efficiency.

Inactive Publication Date: 2016-07-27
FUJITSU LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0013] However, for bulk heterojunction organic thin film solar cells, the rate of recombination of carriers once separated in the pn junction is high in the photoelectric conversion layer, and there is a problem of low photoelectric conversion efficiency.

Method used

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  • Photoelectric conversion element and manufacturing method thereof
  • Photoelectric conversion element and manufacturing method thereof
  • Photoelectric conversion element and manufacturing method thereof

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Embodiment Construction

[0033] Below, illustrate the present invention in conjunction with accompanying drawing. refer to Figure 1 to Figure 7 The photoelectric conversion element and its manufacturing method according to the embodiment of the present invention will be described.

[0034] The photoelectric conversion element of this embodiment can be used, for example, as an organic thin-film solar cell, specifically, as a bulk heterojunction organic thin-film solar cell.

[0035] Such as figure 1 As shown, the photoelectric conversion element includes: a substrate 1; a lower electrode 2; a p-type inorganic semiconductor layer 3; a noble metal film 4; a photoelectric conversion layer 7 having a p-type organic semiconductor column 5 and an n-type organic semiconductor column 6; and an upper electrode 8.

[0036] In addition, the p-type inorganic semiconductor layer 3 is also referred to as a first conductivity type inorganic semiconductor layer. In addition, the p-type organic semiconductor colum...

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Abstract

A photoelectric conversion element, comprising: a first conductive type inorganic semiconductor layer (3); a noble metal film (4), disposed on a part of the surface of the first conductive type inorganic semiconductor layer; and a photoelectric conversion layer (7), having an A first conductive type organic semiconductor column (5) in contact with the film and containing sulfur atoms, and a second conductive type organic semiconductor column (6) in contact with the first conductive type inorganic semiconductor layer and not containing sulfur atoms.

Description

technical field [0001] The present invention relates to a photoelectric conversion element and a manufacturing method thereof. Background technique [0002] Organic thin-film solar cells use a photoelectric conversion layer that combines p-type organic semiconductor polymers with n-type organic semiconductors such as fullerenes. In this organic thin-film solar cell, when excitons generated by incident light reach the When the p-type organic semiconducting polymer is in contact with the n-type organic semiconductor, charge separation occurs. [0003] In the above-mentioned organic thin-film solar cells, in most cases, a bulk heterojunction photoelectric conversion layer is used, and the bulk heterojunction photoelectric conversion layer has a p-type organic semiconductor material and an n-type organic semiconductor material with tens of Nano (nm) size aggregated and intertwined internal structure. This is called a bulk heterojunction type organic thin film solar cell. [0...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42
CPCH10K85/215H10K30/81H10K30/30H10K30/10H10K30/50Y02E10/549B82Y10/00Y02P70/50
Inventor 百濑悟
Owner FUJITSU LTD